A process for breaking silicide stringers extending between silicide regions of different active regions on a semiconductor device is provided. Consistent with an exemplary fabrication process, two adjacent silicon active regions are formed on a substrate and a metal layer is formed over the two adjacent silicon active regions. The metal layer is then reacted with the silicon active regions to form a metal silicide on each silicon active region. This silicide reaction also forms silicide stringers extending from each silicon active region. Finally, at least part of each silicide stringer is removed. During the formation of the silicide stringers at least one silicide stringer may be formed which bridges the metal silicide over one of the silicon regions and the metal silicide over the other silicon region. In such circumstances, the removal process may, for example, break the silicide stringer and electrically decouple the two silicon regions. The two silicon active regions may, for example, be a gate electrode and an adjacet source/drain region. As another example, the two adjacent active regions may be two nearby polysilicon lines.