发明授权
- 专利标题： Vapor phase diamond synthesis method
- 专利标题（中）： 气相金刚石合成法
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申请号： US08912369申请日： 1997-08-18
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公开(公告)号： US06248400B1公开(公告)日： 2001-06-19
- 发明人: Kazuaki Kurihara , Kenichi Sasaki , Tsukasa Itani , Shinobu Akashi
- 申请人： Kazuaki Kurihara , Kenichi Sasaki , Tsukasa Itani , Shinobu Akashi
- 优先权： JP5-200605 19930812
- 主分类号： C23C1627
- IPC分类号： C23C1627
摘要：
A DC plasma jet CVD process having a high film deposition rate is employed. A material having low adhesion with diamond is used for a substrate. A diamond film automatically peels from the substrate at the time of cooling. Gas is recycled because gas utilization efficiency is low. In this case, deposition of carbon can be prevented by setting a gas flow velocity to at least 5 m/s in the proximity of an anodic point.
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