发明授权
- 专利标题： Light emitting semiconductor device using gallium nitride group compound
- 专利标题（中）： 使用氮化镓基化合物的发光半导体器件
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申请号： US08956950申请日： 1997-10-23
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公开(公告)号： US06249012B1公开(公告)日： 2001-06-19
- 发明人: Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
- 申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
- 优先权： JP2-050209 19900228; JP2-050210 19900228; JP2-050211 19900228; JP2-050212 19900228
- 主分类号： H01L3300
- IPC分类号： H01L3300
摘要：
A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3×10−1 &OHgr;cm to 8×10−3 &OHgr;cm or a carrier concentration ranging from 6×1016/cm3 to 3×1018/cm3.
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