发明授权
US06249135B1 Method and apparatus for passive optical characterization of semiconductor substrates subjected to high energy (MEV) ion implantation using high-injection surface photovoltage
有权
使用高注射表面光电压进行高能量（MEV）离子注入的半导体衬底的无源光学表征的方法和装置
- 专利标题： Method and apparatus for passive optical characterization of semiconductor substrates subjected to high energy (MEV) ion implantation using high-injection surface photovoltage
- 专利标题（中）： 使用高注射表面光电压进行高能量（MEV）离子注入的半导体衬底的无源光学表征的方法和装置
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申请号： US09268338申请日： 1999-03-16
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公开(公告)号： US06249135B1公开(公告)日： 2001-06-19
- 发明人: Shigeyuki Maruyama , Kazuhiro Tashiro , Makoto Haseyama , Futoshi Fukaya
- 申请人： Shigeyuki Maruyama , Kazuhiro Tashiro , Makoto Haseyama , Futoshi Fukaya
- 优先权： JP9-255786 19970919; JP10-263579 19980917
- 主分类号： G01R3126
- IPC分类号： G01R3126
摘要：
A semiconductor testing device is used for testing a semiconductor device which has at least one spherical connection terminal. The testing device includes an insulating substrate having an opening formed therein at a position corresponding to the position of the spherical connection terminal, and a contact member, formed on the insulating substrate, including a connection portion which is connected with the spherical connection terminal, at least the connection portion being deformable and extending into the opening.