In a current perpendicular type magnetoresistive device, a current efficiently flows in a direction perpendicular to a plane of an MR element and the sensitivity of the MR element is increased. Upper and lower shielding layers form a gap therebetween so that the MR element is situated within the gap. Upper and lower gap layers are provided within the gap so that the MR element is interposed between the upper and lower gap layers. The upper gap layer is provided between the upper shielding layer and the MR element. The lower gap layer is provided between the lower shielding layer and the MR element. The lower gap layer is formed from tantalum. An under layer formed from a material having a body-centered cubic structure is interposed between the lower shielding layer and the lower gap layer.