公开(公告)号：US08981446B2

公开(公告)日：2015-03-17

申请号：US14018337

申请日：2013-09-04

申请人： Takashi Nakazawa ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Kenji Noma

发明人： Takashi Nakazawa ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Kenji Noma

IPC分类号： H01L27/108 ,  H01L21/8244 ,  G11C11/00 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1655 ,  H01L27/2463 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory including an isolation region with an insulator in a trench is disclosed. The isolation region defines active areas extending in a 1st direction and having 1st and 2nd active areas, an isolation region extending in a 2nd direction perpendicular to the 1st direction exists between the 1st and 2nd active areas. 1st and 2nd word lines extending in the 2nd direction are buried in a surface of semiconductor substrate. 1st and 2nd select transistors connected to the word lines are on the 1st active area. 1st and 2nd variable resistance elements connected to drain regions of the 1st and 2nd select transistors are on the 1st active area.

摘要翻译： 根据一个实施例，公开了一种包括在沟槽中具有绝缘体的隔离区的磁存储器。 隔离区域限定在第一方向上延伸并且具有第一和第二有源区域的有源区域，在第一和第二有效区域之间存在沿垂直于第一方向的第二方向延伸的隔离区域。 在第二方向上延伸的第一和第二字线被埋在半导体衬底的表面中。 连接到字线的第一和第二选择晶体管在第一有效区域。 连接到第一和第二选择晶体管的漏极区的第一和第二可变电阻元件在第一有效区上。

公开(公告)号：US20120241880A1

公开(公告)日：2012-09-27

申请号：US13235406

申请日：2011-09-18

申请人： Kenji Noma ,  Hiroshi Watanabe ,  Shinya Kobayashi

发明人： Kenji Noma ,  Hiroshi Watanabe ,  Shinya Kobayashi

IPC分类号： H01L21/20 ,  H01L29/82

CPC分类号： H01L29/82 ,  B82Y40/00 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/105 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a manufacturing method of a magnetic memory includes forming a magnetoresistive element in a cell array section on a semiconductor substrate, forming a dummy element in a peripheral circuit section on the semiconductor substrate, the dummy element having the same stacked structure as the magnetoresistive element and being arranged at the same level as the magnetoresistive element, collectively flattening the magnetoresistive element and the dummy element, applying a laser beam to the dummy element to form the dummy element into a non-magnetic body, and forming an upper electrode on the flattened magnetoresistive element.

摘要翻译： 根据一个实施例，磁存储器的制造方法包括在半导体衬底上的单元阵列部分中形成磁阻元件，在半导体衬底上的外围电路部分中形成虚设元件，该虚设元件具有与 该磁阻元件被布置在与磁阻元件相同的水平面上，使磁阻元件和虚拟元件相互平坦化，向该虚拟元件施加激光束以将该虚设元件形成为非磁性体，并形成上部电极 在平坦的磁阻元件上。

公开(公告)号：US20090053560A1

公开(公告)日：2009-02-26

申请号：US12258063

申请日：2008-10-24

申请人： Kenji Noma

发明人： Kenji Noma

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  G11B5/127 ,  H01F10/14 ,  H01F10/324 ,  Y10T428/115 ,  Y10T428/1186

摘要： In the magnetic film, projection of a magnetic pole, which is caused when a magnetic head is heated, can be restrained. The magnetic film can be applied to a magnetic head of a hard disk drive unit capable of recording data with high recording density. The magnetic film comprises: a first alloy film made of an alloy of iron (Fe) and platinum (Pt), or an alloy of iron (Fe), platinum (Pt) and other metal or metals; and a second alloy film directly layered on the first alloy film, the second alloy film made of an alloy of at least two metals selected from a group including iron (Fe), nickel (Ni) and cobalt (Co). Molar content of iron (Fe) in the first alloy film is 63-74 %.

摘要翻译： 在磁性膜中，可以抑制在加热磁头时引起的磁极的突出。 可以将磁性膜施加到能够以高记录密度记录数据的硬盘驱动单元的磁头。 磁性膜包括：由铁（Fe）和铂（Pt）的合金或铁（Fe），铂（Pt）和其它金属或金属的合金制成的第一合金膜; 以及直接层叠在所述第一合金膜上的第二合金膜，所述第二合金膜由选自铁（Fe），镍（Ni）和钴（Co）的组中的至少两种金属的合金制成。 第一合金膜中铁（Fe）的摩尔含量为63-74％。

公开(公告)号：US20060078762A1

公开(公告)日：2006-04-13

申请号：US11290747

申请日：2005-11-30

申请人： Kenji Noma ,  Masaaki Matsuoka ,  Hitoshi Kanai

发明人： Kenji Noma ,  Masaaki Matsuoka ,  Hitoshi Kanai

IPC分类号： G11B5/33

CPC分类号： H01F10/16 ,  G11B5/187 ,  G11B5/3113 ,  G11C11/16 ,  H01F10/30 ,  H01F41/18 ,  H01F41/20 ,  H01F41/22 ,  Y10T428/115 ,  Y10T428/32

摘要： There is provided a magnetic material with a high saturation magnetization of 2.46 teslas or above. By using this magnetic material in a recording head, it is possible to record information with a higher density on a recording medium. The magnetic material can also be applied to various kinds of solid-state devices. The magnetic material is composed of an alloy film made of iron, cobalt, and palladium, wherein a mole percentage content of palladium is set equal to 0.7% or greater but less than 1.0%, and the magnetic material is formed by dry processing.

摘要翻译： 提供了具有2.46特斯拉或以上的高饱和磁化强度的磁性材料。 通过在记录头中使用该磁性材料，可以在记录介质上记录更高密度的信息。 磁性材料也可以应用于各种固态器件。 磁性材料由铁，钴和钯制成的合金膜构成，其中钯的摩尔百分含量设定为0.7％以上且小于1.0％，磁性材料通过干式加工形成。

公开(公告)号：US20060008679A1

公开(公告)日：2006-01-12

申请号：US10997389

申请日：2004-11-23

申请人： Kenji Noma

发明人： Kenji Noma

IPC分类号： G11B5/66

CPC分类号： B82Y25/00 ,  G11B5/127 ,  H01F10/14 ,  H01F10/324 ,  Y10T428/115 ,  Y10T428/1186

摘要： In the magnetic film, projection of a magnetic pole, which is caused when a magnetic head is heated, can be restrained. The magnetic film can be applied to a magnetic head of a hard disk drive unit capable of recording data with high recording density. The magnetic film comprises: a first alloy film made of an alloy of iron (Fe) and platinum (Pt), or an alloy of iron (Fe), platinum (Pt) and other metal or metals; and a second alloy film directly layered on the first alloy film, the second alloy film made of an alloy of at least two metals selected from a group including iron (Fe), nickel (Ni) and cobalt (Co). Molar content of iron (Fe) in the first alloy film is 63-74%.

摘要翻译： 在磁性膜中，可以抑制在加热磁头时引起的磁极的突出。 可以将磁性膜施加到能够以高记录密度记录数据的硬盘驱动单元的磁头。 磁性膜包括：由铁（Fe）和铂（Pt）的合金或铁（Fe），铂（Pt）和其它金属或金属的合金制成的第一合金膜; 以及直接层叠在所述第一合金膜上的第二合金膜，所述第二合金膜由选自铁（Fe），镍（Ni）和钴（Co）的组中的至少两种金属的合金制成。 第一合金膜中铁（Fe）的摩尔含量为63-74％。

公开(公告)号：US20050047029A1

公开(公告)日：2005-03-03

申请号：US10773902

申请日：2004-02-06

申请人： Kenji Noma

发明人： Kenji Noma

IPC分类号： G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  G11B5/3906 ,  H01F10/3272 ,  H01F10/3281

摘要： The magnetoresistance effect film is capable of performing enough function without employing an antiferromagnetic layer. The film comprises: a seed layer; a first pinned magnetic layer formed on the seed layer; an antiferromagnetically coupling layer formed on the first pinned magnetic layer; a second pinned magnetic layer formed on the antiferromagnetically coupling layer; a nonmagnetic layer formed on the second pinned magnetic layer; a free magnetic layer formed on the nonmagnetic layer; and a protection layer formed on the free magnetic layer. The seed layer fixes magnetizing directions of the first and the second pinned magnetic layer. The seed layer is made of a material which does not exchange-couple with the first pinned magnetic layer.

摘要翻译： 磁阻效应膜能够在不使用反铁磁层的情况下执行足够的功能。 该膜包括：种子层; 形成在种子层上的第一钉扎磁性层; 形成在第一固定磁性层上的反铁磁耦合层; 形成在反铁磁耦合层上的第二固定磁性层; 形成在第二钉扎磁性层上的非磁性层; 形成在非磁性层上的自由磁性层; 以及形成在自由磁性层上的保护层。 种子层固定第一和第二钉扎磁性层的磁化方向。 种子层由不与第一固定磁性层交换耦合的材料制成。

公开(公告)号：US06710985B2

公开(公告)日：2004-03-23

申请号：US09735388

申请日：2000-12-12

申请人： Kenji Noma

发明人： Kenji Noma

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3272 ,  H01F41/325

摘要： There is provided a magnetoresistive film in which an interlayer coupling field Hin is minimized and a large regeneration output is produced. A multilayered film includes an underlayer 1, an antiferromagnetic layer 2, a pinned magnetic layer 3, a nonmagnetic middle layer 4, and a free magnetic layer 5, the pinned magnetic layer comprises a first soft magnetic layer 3—1 and a second soft magnetic layer 3—3 formed of soft magnetic materials and an antiparallel coupling middle layer 3—2, formed between the soft magnetic layers, for coupling the magnetizations of the soft magnetic layers to each other in opposite directions, the antiferromagnetic layer comprises an ordered-form antiferromagnetic material including Mn, and a second underlayer 1—2 as a direct substrate of the antiferromagnetic layer comprises a metal selected from the group consisting of Ru, Os, Re, Tc, Cd, Ti, Zn, Al, Au, Ir, Pd, Pt, Rh, Ag, Nb, Mo, W, V, and &agr;-Ta or an alloy including an element of the selected metal.

摘要翻译： 提供了其中层间耦合场Hin最小化并产生大的再生输出的磁阻膜。 多层膜包括底层1，反铁磁层2，钉扎磁性层3，非磁性中间层4和自由磁性层5，钉扎磁性层包括第一软磁性层3-1和第二软磁性层 由软磁性材料形成的层3-3和形成在软磁性层之间的反平行耦合中间层3-2，用于将软磁性层的磁化彼此相反地相反地耦合，反铁磁层包括有序形式 包含Mn的反铁磁材料和作为反铁磁性层的直接衬底的第二底层1-2包括选自由Ru，Os，Re，Tc，Cd，Ti，Zn，Al，Au，Ir，Pd ，Pt，Rh，Ag，Nb，Mo，W，V和α-Ta或包含所选金属元素的合金。

公开(公告)号：US06690552B2

公开(公告)日：2004-02-10

申请号：US09729392

申请日：2000-12-04

申请人： Kenji Noma ,  Hitoshi Kanai

发明人： Kenji Noma ,  Hitoshi Kanai

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268

摘要： There is provided a magnetoresistive film high in resistance to destruction. The magnetoresistive film is a multilayered film including: an antiferromagnetic layer 2 for generating a bias magnetic field; a pinned magnetic layer 3 having magnetization whose direction is fixed by the bias magnetic field; a free magnetic layer 5 having magnetization whose direction changes in accordance with an external magnetic field; and a nonmagnetic middle layer 4 held between the pinned magnetic layer and the free magnetic layer, and is held by a pair of insulation layers (not shown). When a current is passed parallel to the magnetoresistive film, a current center as a position of the thickness direction for dividing the current into two so as to obtain respective equal current amounts is positioned on a side including the pinned magnetic layer during dividing of the magnetoresistive film into two in a center position of a layer thickness of the nonmagnetic middle layer in the thickness direction.

摘要翻译： 提供了耐破坏性高的磁阻膜。 磁阻膜是一种多层膜，包括：用于产生偏磁场的反铁磁层2; 具有通过偏置磁场固定其方向的磁化的钉扎磁性层3; 具有根据外部磁场的方向变化的磁化的自由磁性层5; 以及保持在钉扎磁性层和自由磁性层之间的非磁性中间层4，并且被一对绝缘层（未示出）保持。 当电流平行于磁阻膜通过时，作为用于将电流分成二个以获得相应电流量的电流的厚度方向的位置的电流中心位于包含磁化层的磁性层的一侧 在厚度方向上将非磁性中间层的层厚度的中心位置分成两层。

公开(公告)号：US06671138B2

公开(公告)日：2003-12-30

申请号：US10033602

申请日：2001-12-27

申请人： Kenji Noma ,  Hitoshi Kanai ,  Kenichi Aoshima

发明人： Kenji Noma ,  Hitoshi Kanai ,  Kenichi Aoshima

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

摘要： An object of the present invention is to provide a magnetoresistive effect type of head that is high in the magnetoresistive rate while including the laminated ferrimagnetic film. The fixed magnetic layer of the magnetoresistive effect type of head has a first fixed magnetic layer, a second fixed magnetic layer laminated at a position farther from the free magnetic layer as compared with the first fixed magnetic layer, and an opposite-parallel-coupling intermediate layer interposed between the first fixed magnetic layer and the second fixed magnetic layer, in which magnetizations of the first and second fixed magnetic layers are coupled with one another in such a manner that the magnetizations are pointed in directions which are substantially parallel and mutually opposite. The second fixed magnetic layer is formed with a material that is different from a material of said first fixed magnetic layer, and has a resistivity higher than that of said first fixed magnetic layer.

摘要翻译： 本发明的目的是提供一种磁阻效应型磁头，其磁阻率高，同时包含叠层铁氧体膜。 磁阻效应型磁头的固定磁性层具有与第一固定磁性层相比层压在离自由磁性层更远的位置的第一固定磁性层，第二固定磁性层和相对平行耦合中间体 介于第一固定磁性层和第二固定磁性层之间的层，其中第一和第二固定磁性层的磁化彼此耦合，使得磁化指向基本平行且相互相反的方向。 第二固定磁性层由不同于所述第一固定磁性层的材料的材料形成，并且具有高于所述第一固定磁性层的电阻率的电阻率。

公开(公告)号：US06501627B2

公开(公告)日：2002-12-31

申请号：US09994262

申请日：2001-11-26

申请人： Kenji Noma ,  Hitoshi Kanai ,  Junichi Kane ,  Kenichi Aoshima

发明人： Kenji Noma ,  Hitoshi Kanai ,  Junichi Kane ,  Kenichi Aoshima

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996

摘要： A spin-valve magnetoresistive head having end parts of a free magnetic layer insensitive to an external magnetic field so as to improve sensitivity is provided. The spin-valve magnetoresistive head includes, at least on the terminal part sides, a lamination formed of a first antiferromagnetic layer, a soft magnetic layer, an antiparallel coupling intermediate layer, and a first free magnetic layer.