发明授权
- 专利标题： Photosensitive semiconductor electrode, method of manufacturing photosensitive semiconductor electrode, and photoelectric converter using photosensitive semiconductor
- 专利标题（中）： 感光性半导体电极，感光性半导体电极的制造方法以及使用感光性半导体的光电转换体
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申请号： US09098519申请日： 1998-06-17
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公开(公告)号： US06252156B1公开(公告)日： 2001-06-26
- 发明人: Yoshiyuki Ono , Hidekazu Hirose , Katsuhiro Sato , Akira Imai
- 申请人： Yoshiyuki Ono , Hidekazu Hirose , Katsuhiro Sato , Akira Imai
- 优先权： JP9-167074 19970624; JP9-304615 19971106
- 主分类号： H01L310264
- IPC分类号： H01L310264
摘要：
Disclosed is an aggregate of metal oxide fine particles having fine pores whose size frequency distribution has a plurality of peaks. Disclosed also is a method preferably used for producing the aggregate of metal oxide fine particles. The method comprises a step of reacting a precursor of a metal oxide with a compound interacting with the precursor in a solvent to yield metal oxide fine particles. Also disclosed are a photosensitive semiconductor comprising a substrate, and a metal oxide porous body having fine pores whose size frequency distribution has a plurality of peaks and a method preferably used for manufacturing the photosensitive semiconductor electrode. This photosensitive semiconductor electrode has a high energy conversion efficiency and is preferably used in a photoelectric converter.
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