Invention Grant
- Patent Title: Process for fabrication of an all-epitaxial-oxide transistor
- Patent Title (中): 制造全外延氧化物晶体管的工艺
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Application No.: US09306635Application Date: 1999-05-07
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Publication No.: US06259114B1Publication Date: 2001-07-10
- Inventor: James A. Misewich , Alejandro G. Schrott
- Applicant: James A. Misewich , Alejandro G. Schrott
- Main IPC: H01L2912
- IPC: H01L2912
Abstract:
A method and structure of forming an integrated circuit chip having a transistor includes forming a conductive oxide layer, forming a Mott transition oxide layer over the conductive oxide layer and forming an insulative oxide layer over the Mott transition oxide layer.
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