发明授权
- 专利标题： Dummy patterning for semiconductor manufacturing processes
- 专利标题（中）： 用于半导体制造工艺的虚拟图案
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申请号： US09262214申请日： 1999-03-04
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公开(公告)号： US06259115B1公开(公告)日： 2001-07-10
- 发明人: Lu You , Simon S. Chan , Kai Yang
- 申请人： Lu You , Simon S. Chan , Kai Yang
- 主分类号： H01L2156
- IPC分类号： H01L2156
摘要：
A method is provided for inserting dummy conductive channels along with the interconnected conductive channels. The dummy channels have an approximately even metal weight distribution to provide better plating uniformity, minimize CMP dishing, improve process heating uniformity, improve spin-on process properties, and increase etch and lithography uniformity.
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