发明授权
US06261704B1 MgO buffer layers on rolled nickel or copper as superconductor substrates
失效
轧制的镍或铜作为超导体衬底的MgO缓冲层
- 专利标题： MgO buffer layers on rolled nickel or copper as superconductor substrates
- 专利标题（中）： 轧制的镍或铜作为超导体衬底的MgO缓冲层
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申请号： US09096558申请日： 1998-06-12
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公开(公告)号： US06261704B1公开(公告)日： 2001-07-17
- 发明人: Mariappan Paranthaman , Amit Goyal , Donald M. Kroeger , Frederic A. List, III
- 申请人： Mariappan Paranthaman , Amit Goyal , Donald M. Kroeger , Frederic A. List, III
- 主分类号： B05B512
- IPC分类号： B05B512
摘要：
Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.
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