发明授权
- 专利标题： Repair process for aluminum nitride substrates
- 专利标题（中）： 氮化铝基板的修复工艺
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申请号： US09211595申请日： 1998-12-14
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公开(公告)号： US06262390B1公开(公告)日： 2001-07-17
- 发明人: David B. Goland , Mark J. LaPlante , David C. Long , Dale C. McHerron , Krishna G. Sachdev , Subhash L. Shinde
- 申请人： David B. Goland , Mark J. LaPlante , David C. Long , Dale C. McHerron , Krishna G. Sachdev , Subhash L. Shinde
- 主分类号： B23K2600
- IPC分类号： B23K2600
摘要：
A method to repair Aluminum Nitride (AlN) substrates is disclosed wherein a frequency doubled Q-switched Nd:YAG laser is used to remove unwanted metallurgy. The substrate is place in a liquid filled work chamber which acts to prevent metallic species of AlN from forming. The repair site can be sealed with a novel polymer coating to prevent contamination or corrosion. Repairs can be made to buried or surface metallurgy.
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