发明授权
- 专利标题: Integrated circuit dielectric and method
- 专利标题(中): 集成电路电介质和方法
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申请号: US09436142申请日: 1999-11-09
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公开(公告)号: US06265303B1公开(公告)日: 2001-07-24
- 发明人: Jiong-Ping Lu , Changming Jin
- 申请人: Jiong-Ping Lu , Changming Jin
- 主分类号: H01L214763
- IPC分类号: H01L214763
摘要:
A surface treatment for porous silica to enhance adhesion of overlying layers. Treatments include surface group substitution, pore collapse, and gap filling layer (520) which invades open surface pores (514) of xerogel (510).