发明授权
US06268230B1 Semiconductor light emitting device 有权
半导体发光器件

  • 专利标题: Semiconductor light emitting device
  • 专利标题(中): 半导体发光器件
  • 申请号: US09421324
    申请日: 1999-10-18
  • 公开(公告)号: US06268230B1
    公开(公告)日: 2001-07-31
  • 发明人: Toshiaki Kuniyasu
  • 申请人: Toshiaki Kuniyasu
  • 优先权: JP10-295532 19981016
  • 主分类号: H01L2100
  • IPC分类号: H01L2100
Semiconductor light emitting device
摘要:
By providing an area where an Au film 28b is removed and a Ti film 28a is exposed along the plane tangent to the side where the p-n junction of a semiconductor chip is exposed, sticking of the Au film 28b to the chip side or protruding of the film as a flash from the side is prevented, which normally provides a starting place for creep of a solder 42 on the chip side, which in turn causes p-n junction short-circuiting when dividing of chips.
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