发明授权
US06268297B1 Self-planarizing low-temperature doped-silicate-glass process capable of gap-filling narrow spaces
有权
自平坦化低温掺杂硅酸盐玻璃工艺，能够填补狭窄的空间
- 专利标题： Self-planarizing low-temperature doped-silicate-glass process capable of gap-filling narrow spaces
- 专利标题（中）： 自平坦化低温掺杂硅酸盐玻璃工艺，能够填补狭窄的空间
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申请号： US09196725申请日： 1998-11-20
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公开(公告)号： US06268297B1公开(公告)日： 2001-07-31
- 发明人: Somnath S. Nag , Gregory B. Shinn , Girish A. Dixit
- 申请人： Somnath S. Nag , Gregory B. Shinn , Girish A. Dixit
- 主分类号： H01L21469
- IPC分类号： H01L21469
摘要：
A low-temperature pre-metal dielectric deposition process using phosphine-based chemistry in a high-density plasma chemical-vapor deposition technique. The process uses a phosphorous-doped oxide of up to 3.5 percent (wt) deposited at less than 350 degrees C. capable of filling 0.4 micron spaces between poly-silicon gates without microvoids.