A method and device for testing and burning-in semiconductor circuits. The method and device permit the entire wafer to be tested by temporarily attaching the wafer to a test substrate using electrically conductive adhesive (ECA). The ECA conforms to deviations from co-planarity of the contact points of both the wafer and test substrate while providing a quality electrical connection at each point. ECA material can be deposited on either the wafer contacts or the substrate pads. In addition, the ECA may be deposited on C4 bumps or tin-capped lead bases. Variations in the method and device include filling vias of a non-conductive interposer with ECA. The electrical connection may be enhanced by forming conductive dendrites on test pads while the ECA is deposited on the wafer contacts. To further enhance the electrical connection, the ECA material can be plasma etched to remove some of its polymer matrix and to expose the electrically conductive particles on one side and then plating with palladium. After the palladium-plated ECA is brought into contact with aluminum pads, palladium-coated aluminum pads, or even C4 solder bumps, conductive dendrites are formed on the palladium-treated ECA bumps.