发明授权
US06269050B1 Internal clock generating circuit of synchronous type semiconductor memory device and method thereof 有权
同步型半导体存储器件的内部时钟发生电路及其方法

  • 专利标题: Internal clock generating circuit of synchronous type semiconductor memory device and method thereof
  • 专利标题(中): 同步型半导体存储器件的内部时钟发生电路及其方法
  • 申请号: US09594888
    申请日: 2000-06-14
  • 公开(公告)号: US06269050B1
    公开(公告)日: 2001-07-31
  • 发明人: Kook-Hwan KwonYong-Hwan Noh
  • 申请人: Kook-Hwan KwonYong-Hwan Noh
  • 优先权: KR99-22202 19990615
  • 主分类号: G11C800
  • IPC分类号: G11C800
Internal clock generating circuit of synchronous type semiconductor memory device and method thereof
摘要:
An internal clock generating circuit of a synchronous type semiconductor memory device includes a transmission part for transmitting a first clock enable signal in response to applying a first level of a first clock signal. It also includes a latch part for latching the first clock enable signal transmitted from the transmission part. A gating part gates the latched first clock enable signal with the first clock signal to generate a second clock signal as an internal clock signal for the memory device. This reduces a time lag by which the speed of the internal clock is synchronized with the external clock signal.
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