发明授权
- 专利标题: Method of applying partial reverse mask
- 专利标题(中): 应用部分反面罩的方法
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申请号: US09241843申请日: 1999-02-01
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公开(公告)号: US06271118B1公开(公告)日: 2001-08-07
- 发明人: Juan-Yuan Wu , Water Lur
- 申请人: Juan-Yuan Wu , Water Lur
- 主分类号: H01L214763
- IPC分类号: H01L214763
摘要:
A method is described. A substrate is provided. A first conductive layer with a first width and a second conductive layer with a second width are formed on the substrate. Photolithography and etching processes are performed on the dielectric layer to at least expose a first region of the first conductive layer and a second region of the second conductive layer. An oxide layer is then formed over the dielectric layer and the exposed first and second conductive layers. The method of applying partial reverse mask is able to resolve the adhesion problem of the dielectric layer with low dielectric constant.