发明授权
US06274399B1 Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices
有权
III-V族氮化物半导体膜和光电子器件的应变工程和杂质控制方法
- 专利标题： Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices
- 专利标题（中）： III-V族氮化物半导体膜和光电子器件的应变工程和杂质控制方法
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申请号： US09655752申请日： 2000-09-06
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公开(公告)号： US06274399B1公开(公告)日： 2001-08-14
- 发明人: R. Scott Kern , Changhua Chen , Werner Goetz , Chihping Kuo
- 申请人： R. Scott Kern , Changhua Chen , Werner Goetz , Chihping Kuo
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using AlxInyGa1−x−yN (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interface layer varies from 0.01-10.0 &mgr;m.