发明授权
- 专利标题： DC electric field assisted anneal
- 专利标题（中）： 直流电场辅助退火
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申请号： US09538309申请日： 2000-03-30
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公开(公告)号： US06274465B1公开(公告)日： 2001-08-14
- 发明人: Arne W. Ballantine , John J. Ellis-Monaghan , Toshiharu Furukawa , Glenn R. Miller , James A. Slinkman
- 申请人： Arne W. Ballantine , John J. Ellis-Monaghan , Toshiharu Furukawa , Glenn R. Miller , James A. Slinkman
- 主分类号： H01L2104
- IPC分类号： H01L2104
摘要：
A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to a DC electric field.
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