发明授权
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US09385631申请日: 1999-08-27
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公开(公告)号: US06274895B1公开(公告)日: 2001-08-14
- 发明人: Isamu Fujii , Kiyoshi Nakai , Yukihide Suzuki , Sadayuki Morita , Hidekazu Egawa , Katura Abe , Noriaki Sakamoto
- 申请人: Isamu Fujii , Kiyoshi Nakai , Yukihide Suzuki , Sadayuki Morita , Hidekazu Egawa , Katura Abe , Noriaki Sakamoto
- 优先权: JP10-244009 19980828
- 主分类号: H01L2710
- IPC分类号: H01L2710
摘要:
A plurality of unit areas having one to a plurality of MOSFETs for implementing specific logic circuits are placed in a first direction. A first interconnection extending in the first direction is formed over each unit area. A second interconnection extending in the first direction is formed along the plurality of unit areas and outside the unit areas. Wiring dedicated areas provided with a third interconnection extending in a second direction intersecting the first direction are respectively provided between the adjacent unit areas. A logic circuit formed in each unit area has both a first connection form connected to the first interconnection and a second connection form connected to the third interconnection via the second interconnection according to combinations with the wiring dedicated areas adjacent thereto as needed.
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