发明授权
- 专利标题: Single deposition layer metal dynamic random access memory
- 专利标题(中): 单沉积层金属动态随机存取存储器
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申请号: US08852911申请日: 1997-05-08
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公开(公告)号: US06274928B1公开(公告)日: 2001-08-14
- 发明人: Stephen L. Casper , Timothy J. Allen , Mark D. Durcan , Brian M. Shirley , Howard E. Rhodes
- 申请人: Stephen L. Casper , Timothy J. Allen , Mark D. Durcan , Brian M. Shirley , Howard E. Rhodes
- 主分类号: H01L2352
- IPC分类号: H01L2352
摘要:
A 16 megabit (224) or greater density single deposition layer metal Dynamic Random Access Memory (DRAM) part is described which allows for a die that fits within an industry-standard 300 ml wide SOJ (Small Outline J-wing) package or a TSOP (Thin, Small Outline Package) with little or no speed loss over previous double metal deposition layered 16 megabit DRAM designs. This is accomplished using a die architecture which allows for a single metal layer signal path, together with the novel use of a lead frame to remove a substantial portion of the power busing from the die, allowing for a smaller, speed-optimized DRAM. The use of a single deposition layer metal results in lower production costs, and shorter production time.