发明授权
- 专利标题： Ferroelectric memory and method
- 专利标题（中）： 铁电记忆和方法
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申请号： US09605933申请日： 2000-06-28
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公开(公告)号： US06275408B1公开(公告)日： 2001-08-14
- 发明人: Katsuhiro Aoki , Tomoyuki Sakoda
- 申请人： Katsuhiro Aoki , Tomoyuki Sakoda
- 主分类号： G11C1122
- IPC分类号： G11C1122
摘要：
Ferroelectric memory with one-capacitor/one-transistor cells and a reference cell with double the capacitance plus a sense amplifier for comparing transient currents in resistors at the sense amplifier inputs. The reference cell includes a diode to prevent reference capacitor polarization switching.
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