发明授权
US06277698B1 Method of manufacturing semiconductor devices having uniform, fully doped gate electrodes
有权
具有均匀的，完全掺杂的栅电极的半导体器件的制造方法
- 专利标题： Method of manufacturing semiconductor devices having uniform, fully doped gate electrodes
- 专利标题（中）： 具有均匀的，完全掺杂的栅电极的半导体器件的制造方法
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申请号： US09382580申请日： 1999-08-25
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公开(公告)号： US06277698B1公开(公告)日： 2001-08-21
- 发明人: Emi Ishida , Dong-Hyuk Ju , David Wu
- 申请人： Emi Ishida , Dong-Hyuk Ju , David Wu
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
A semiconductor device is provided with a gate electrode having a substantially rectangular profile by forming a dielectric film prior to depositing the gate electrode layer. The dielectric film is patterned and etched to form regions having a rectangular profile separated by open regions. A gate electrode layer is then deposited followed by planarization to form gate electrodes having a substantially rectangular profile.
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