发明授权
US06281534B1 Low imprint ferroelectric material for long retention memory and method of making the same 有权
用于长保留记忆的低压刻铁电材料和制造相同的方法

Low imprint ferroelectric material for long retention memory and method of making the same
摘要:
A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.
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