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    Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same
    1.
    发明授权
    Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same 有权
    对氢曝露具有低灵敏度的铁电集成电路及其制造方法

    公开(公告)号：US06570202B2

    公开(公告)日：2003-05-27

    申请号：US09779391

    申请日：2001-02-07

    申请人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    发明人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    IPC分类号： H01L2976

    CPC分类号： H01L27/11502 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/55 ,  H01L28/75

    摘要： A hydrogen barrier layer is formed above a ferroelectric thin film in an integrated circuit. The hydrogen barrier layer is directly over a protected segment of the ferroelectric thin film, while a sacrificial segment of the ferroelectric thin film extends laterally beyond the edges of the hydrogen barrier layer. The sacrificial segment absorbs hydrogen so that it cannot diffuse laterally into the protected segment of the ferroelectric thin film. After it absorbs hydrogen, the sacrificial segment is etched away to allow electrical connection to circuit layers below it. The ferroelectric thin film preferably comprises a layered superlattice compound. Excess bismuth or niobium added to the standard precursor solution of a strontium bismuth tantalum niobate compound helps to reduce hydrogen degradation of the ferroelectric properties.

    摘要翻译： 在集成电路中的铁电薄膜的上方形成氢阻挡层。 氢阻挡层直接在铁电薄膜的受保护部分之上，而铁电薄膜的牺牲段横向延伸超过氢阻挡层的边缘。 牺牲段吸收氢，使得其不能横向扩散到铁电薄膜的受保护段中。 在吸收氢之后，牺牲段被蚀刻掉以允许电连接到其下方的电路层。 铁电薄膜优选包含层状超晶格化合物。 添加到铌酸铋钽酸锶化合物的标准前体溶液中的过量铋或铌有助于降低铁电性能的氢降解。

    Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating same
    2.
    发明授权
    Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating same 有权
    具有自对准氢阻挡层的集成电路及其制造方法

    公开(公告)号：US06512256B1

    公开(公告)日：2003-01-28

    申请号：US09197385

    申请日：1998-11-20

    申请人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    发明人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    IPC分类号： H01L31119

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

    摘要： In an integrated circuit, a stack of thin film layers comprising respectively a bottom electrode, a thin film of metal oxide, a top electrode, a lower barrier-adhesion layer, a hydrogen barrier layer, and an upper barrier-adhesion layer are patterned to form a memory capacitor capped with a self-aligned hydrogen barrier layer. Preferably, the top and bottom electrodes comprise platinum, the metal oxide material comprises ferroelectric layered superlattice material, the upper and lower barrier-adhesion layers comprise titanium, and the hydrogen barrier layer comprises titanium nitride. The hydrogen barrier layer inhibits diffusion of hydrogen, thereby preventing hydrogen degradation of the metal oxides. Part of the upper barrier-adhesion layer is removed in order to increase the electrical conductivity in the layer. Preferably, the memory capacitor is a ferroelectric nonvolatile memory. Preferably, the layered superlattice material includes strontium bismuth tantalate or strontium bismuth tantalum niobate.

    摘要翻译： 在集成电路中，将包括底部电极，金属氧化物薄膜，顶部电极，下部阻挡层 - 粘合层，氢气阻挡层和上部阻挡 - 粘附层的薄膜层叠层图案化 形成用自对准氢阻挡层封盖的记忆电容器。 优选地，顶部和底部电极包括铂，金属氧化物材料包括铁电层状超晶格材料，上部和下部阻挡 - 粘附层包含钛，氢气阻挡层包括氮化钛。 氢阻挡层抑制氢的扩散，从而防止金属氧化物的氢降解。 为了增加层中的导电性，去除了上部阻挡 - 粘附层的一部分。 优选地，存储电容器是铁电非易失性存储器。 优选地，层状超晶格材料包括钽酸铋钽或铌酸铋钽铌酸盐。

    Interlayer oxide containing thin films for high dielectric constant application
    3.
    发明授权
    Interlayer oxide containing thin films for high dielectric constant application 有权
    用于高介电常数应用的含有薄膜的层间氧化物

    公开(公告)号：US06495878B1

    公开(公告)日：2002-12-17

    申请号：US09365628

    申请日：1999-08-02

    申请人： Shinichiro Hayashi ,  Vikram Joshi ,  Narayan Solayappan ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

    发明人： Shinichiro Hayashi ,  Vikram Joshi ,  Narayan Solayappan ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

    IPC分类号： H01L27108

    CPC分类号： H01L21/02197 ,  H01L21/02205 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31691 ,  H01L27/0629

    摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−Y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is

    摘要翻译： 一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜 。 一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。 优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= x <= 1.0且0 <= y <= 1.0; （BaxSr1-x）2（TayNb1-Y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; 和（BaxSr1-x）2Bi2（TayNb1-y）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。 根据本发明的薄膜的相对介电常数> 40，优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

    Ferroelectric integrated circuit having hydrogen barrier layer
    4.
    发明授权
    Ferroelectric integrated circuit having hydrogen barrier layer 有权
    具有氢阻挡层的铁电集成电路

    公开(公告)号：US06365927B1

    公开(公告)日：2002-04-02

    申请号：US09541290

    申请日：2000-04-03

    申请人： Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

    发明人： Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

    IPC分类号： H01L2976

    CPC分类号： H01L27/11502 ,  H01L28/55 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of metal oxide material in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following nitrides: aluminum titanium nitride (Al2Ti3N6), aluminum silicon nitride (Al2Si3N6), aluminum niobium nitride (AlNb3N6), aluminum tantalum nitride (AlTa3N6), aluminum copper nitride (Al2Cu3N4), tungsten nitride (WN), and copper nitride (Cu3N2). The thin film of metal oxide is ferroelectric or high-dielectric, nonferroelectric material. Preferably, the metal oxide comprises ferroelectric layered superlattice material. Preferably, the hydrogen barrier layer is located directly over the thin film of metal oxide.

    摘要翻译： 集成电路中的氢扩散阻挡层位于集成电路中以抑制氢扩散到金属氧化物材料的薄膜。 氢扩散阻挡层包括以下氮化物中的至少一种：氮化钛铝（Al 2 Ti 3 N 6），氮化硅铝（Al 2 Si 3 N 6），氮化铌（AlNb 3 N 6），氮化钽铝（AlTa 3 N 6），氮化铝铝（Al 2 Cu 3 N 4） （WN）和氮化铜（Cu3N2）。 金属氧化物的薄膜是铁电或高电介质非电介质材料。 优选地，金属氧化物包括铁电层状超晶格材料。 优选地，氢阻挡层位于金属氧化物的薄膜的正上方。

    Ferroelectric field effect transistor, memory utilizing same, and method of operating same
    5.
    发明授权
    Ferroelectric field effect transistor, memory utilizing same, and method of operating same 失效
    铁电场效应晶体管，利用其的存储器及其操作方法

    公开(公告)号：US06339238B1

    公开(公告)日：2002-01-15

    申请号：US09329670

    申请日：1999-06-10

    申请人： Myoungho Lim ,  Vikram Joshi ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

    发明人： Myoungho Lim ,  Vikram Joshi ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

    IPC分类号： H01L2972

    CPC分类号： H01L27/11502 ,  G11C11/22 ,  G11C11/223 ,  H01L21/28291 ,  H01L27/0629 ,  H01L29/78391

    摘要： A ferroelectric non-volatile memory in which each memory cell consists of a single electronic element, a ferroelectric FET. The FET includes a source, drain, gate and substrate. A cell is selected for writing or reading by application of bias voltages to the source, drain, gate or substrate. A gate voltage equal to one truth table logic value and a drain voltage equal to another truth table logic value are applied via a row decoder, and a substrate bias equal to a third truth table logic value is applied via a column decoder to write to the memory a resultant Ids logic state, which can be non-destructively read by placing a voltage across the source and drain.

    摘要翻译： 一种铁电非易失性存储器，其中每个存储单元由单个电子元件，铁电FET组成。 FET包括源极，漏极，栅极和衬底。 通过对源极，漏极，栅极或衬底施加偏置电压来选择单元进行写入或读取。 通过行解码器施加等于一个真值表逻辑值的栅极电压和等于另一个真值表逻辑值的漏极电压，经由列解码器施加等于第三真值表逻辑值的衬底偏置以写入 记录结果Ids逻辑状态，通过在源极和漏极之间放置电压可以非破坏性地读取。

    Antifuse programmable element using ferroelectric material
    8.
    发明授权
    Antifuse programmable element using ferroelectric material 失效
    防腐可编程元件采用铁电材料

    公开(公告)号：US5463244A

    公开(公告)日：1995-10-31

    申请号：US249870

    申请日：1994-05-26

    申请人： Carlos A. P. De Araujo ,  Larry D. McMillan ,  Joseph D. Cuchiaro

    发明人： Carlos A. P. De Araujo ,  Larry D. McMillan ,  Joseph D. Cuchiaro

    IPC分类号： H01L23/525 ,  H01L27/02

    CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011

    摘要： An electrically programmable antifuse element using ferroelectric materials for the insulative dielectric layer, methods for producing same, and an integrated circuit applying a plurality of ferroelectric antifuse elements in a two dimensional matrix of rows and columns for use as a programmable logic device (PLD) or as a programmable read-only memory (PROM). A ferroelectric material is formed between two conductive electrodes to create a ferroelectric antifuse element. In an alternative embodiment, a plurality of chemically distinct materials is layered to form the dielectric layer. The combined application of an AC electric field and a DC electric field breaks down the ferroelectric material to form a low-resistance conductive filament. The synergy of the two electric fields permits programming antifuse elements of the present invention by applying DC electric fields as low as 2 volts amplitude. In the preferred embodiment, as compared to prior designs, antifuse devices of the present invention display higher resistivity in the unprogrammed state due to the high dielectric constant of ferroelectric materials and lower resistivity in the programmed state because the ferroelectric material breaks down into metal oxide conductive filaments. The resistivity of the conductive filament may be reduced further by the blending of materials through substitution rather than doping processes.

    摘要翻译： 使用用于绝缘介电层的铁电材料的电可编程反熔丝元件，其制造方法和在行和列的二维矩阵中施加多个铁电反熔丝元件的集成电路，用作可编程逻辑器件（PLD）或 作为可编程只读存储器（PROM）。 在两个导电电极之间形成铁电材料以产生铁电反熔丝元件。 在替代实施例中，层叠多个化学上不同的材料以形成电介质层。 交流电场和直流电场的组合应用使铁电材料分解形成低电阻导电细丝。 两个电场的协同作用允许通过施加低至2伏的DC电场来编程本发明的反熔丝元件。 在优选实施例中，与现有设计相比，本发明的反熔丝器件由于铁电材料的高介电常数和编程状态下的较低电阻率而在未编程状态下显示较高的电阻率，因为铁电材料分解为金属氧化物导电 细丝。 导电丝的电阻率可以通过代替而不是掺杂工艺的材料掺合进一步降低。

    Ferroelectric and high dielectric constant transistors
    9.
    发明授权
    Ferroelectric and high dielectric constant transistors 失效
    铁电和高介电常数晶体管

    公开(公告)号：US06559469B1

    公开(公告)日：2003-05-06

    申请号：US09686552

    申请日：2000-10-11

    申请人： Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Vikram Joshi ,  Narayan Solayappan ,  Joseph D. Cuchiaro

    发明人： Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Vikram Joshi ,  Narayan Solayappan ,  Joseph D. Cuchiaro

    IPC分类号： H01L2972

    CPC分类号： H01L27/11502 ,  C23C16/448 ,  C23C16/45561 ,  C23C18/1216 ,  C23C18/14 ,  C30B7/00 ,  C30B7/005 ,  C30B29/68 ,  G11C11/22 ,  G11C11/223 ,  H01L21/31691 ,  H01L27/10805 ,  H01L28/55 ,  H01L28/60

    摘要： An integrated circuit includes a layered superlattice material having the formula A1w1+a1A2w2+a2 . . . Ajwj+ajS1x1+s1S2x2+s2 . . . Skxk+skB1y1+b1B2y2+b2 . . . Blyl+blQz−q, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . B1 represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in ferroelectric FETs in non-volatile memories. Others are high dielectric constant materials that do not degrade or break down over long periods of use and are applied as the gate insulator in volatile memories.

    摘要翻译： 集成电路包括具有公式A1w1 + a1A2w2 + a2的分层超晶格材料。 。 。 Ajwj + ajS1x1 + s1S2x2 + s2。 。 。 Skxk + skB1y1 + b1B2y2 + b2。 。 。 Blyl + blQz-q，其中A1，A2。 。 。 Aj代表钙钛矿结构中的A位元素，S1，S2。 。 。 Sk代表超晶格发生器元件B1，B2。 。 。 B1表示钙钛矿结构中的B位元素，Q表示阴离子，上标表示各元素的化合价，下标表示单元中元素的原子数，并且至少w1和y1为 非零。 这些材料中的一些是非常低的疲劳铁电体，并且被应用在非易失性存储器中的铁电FET中。 其他的是高介电常数材料，其在长期使用中不会劣化或分解，并且作为在绝缘体中的栅绝缘体。

    Low imprint ferroelectric material for long retention memory and method of making the same
    10.
    发明授权
    Low imprint ferroelectric material for long retention memory and method of making the same 有权
    用于长保留记忆的低压刻铁电材料和制造相同的方法

    公开(公告)号：US06358758B2

    公开(公告)日：2002-03-19

    申请号：US09860386

    申请日：2001-05-19

    申请人： Koji Arita ,  Shinichiro Hayashi ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

    发明人： Koji Arita ,  Shinichiro Hayashi ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

    IPC分类号： H01L2100

    CPC分类号： H01L21/31691 ,  H01L27/10852

    摘要： A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.

    摘要翻译： 用于在集成电路中形成铁电体金属氧化物薄膜的液体前体包含超过化学计量平衡量的金属氧化物。 当前体包含用于形成铌酸铋钽酸铋的锶，铋，钽和铌时，前体含有过量的钽和铌中的至少一种。 含有由含有过量的钽和铌的前体制成的层状超晶格材料的薄膜的电容器在75℃下在1010个负极化开关脉冲之后和在125℃的109个负极化开关脉冲之后显示出良好的极化率和低百分比印记。