发明授权
- 专利标题: Wafer drying apparatus and method with residual particle removability enhancement
- 专利标题(中): 晶圆干燥装置和残留颗粒去除性提高方法
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申请号: US09257384申请日: 1999-02-25
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公开(公告)号: US06286524B1公开(公告)日: 2001-09-11
- 发明人: Hisashi Okuchi , Hiroshi Tomita , Soichi Nadahara , Katsuya Okumura
- 申请人: Hisashi Okuchi , Hiroshi Tomita , Soichi Nadahara , Katsuya Okumura
- 优先权: JP10-048265 19980227
- 主分类号: B08B704
- IPC分类号: B08B704
摘要:
A wafer dry cleaning method and apparatus capable of eliminating or suppressing adhesion of dust and particles on dried wafer surfaces while minimizing generation of water marks thereon. To achive this, the wafer dryer apparatus is configured including a surface cleaning/drying chamber structure which houses therein a set of spaced-apart silicon wafer workpieces. The dry chamber is operatively associated with a vacuum evacuation device for retaining the interior of this chamber at low pressures required. A water-drain device is provided for forcing water content separated off from the wafer surfaces to drain out of the drying vessel. During such wafer drying process, the wafers may be driven rotating at high speeds to thereby accelerate centrifugal spin-off of residual drops of water on wafer surfaces. Preferably, a chosen purge gas may be fed into the chamber during wafer rotation. The purge gas supply gets started substantially simultaneously upon activation of a vacuum pump for chamber evacuation, or after completion of such vacuum evacuation. In one illustrative embodiment ultrapure water may be used to rinse the wafers in the chamber.