发明授权
US06287937B1 Method for simultaneous dopant driving and dielectric densification in making a semiconductor structure
有权
在制造半导体结构时同时掺杂剂驱动和电介质致密化的方法
- 专利标题： Method for simultaneous dopant driving and dielectric densification in making a semiconductor structure
- 专利标题（中）： 在制造半导体结构时同时掺杂剂驱动和电介质致密化的方法
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申请号： US09619777申请日： 2000-07-20
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公开(公告)号： US06287937B1公开(公告)日： 2001-09-11
- 发明人: Roger Lee , Fernando Gonzalez
- 申请人： Roger Lee , Fernando Gonzalez
- 主分类号： H01L2176
- IPC分类号： H01L2176
摘要：
The present invention relates to a well-drive process in which the process of well driving is carried out simultaneously with a densification cycle. The inventive method is particularly applicable to isolation trenches having widths at or below about 0.2 microns. The inventive method may be applied to other semiconductive structures of varying geometries.
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