发明授权
- 专利标题： Thermal conductivity enhanced semiconductor structures and fabrication processes
- 专利标题（中）： 热导率增强的半导体结构和制造工艺
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申请号： US09514106申请日： 2000-02-28
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公开(公告)号： US06288426B1公开(公告)日： 2001-09-11
- 发明人: Robert J. Gauthier, Jr. , Dominic J. Schepis , William R. Tonti , Steven H. Voldman
- 申请人： Robert J. Gauthier, Jr. , Dominic J. Schepis , William R. Tonti , Steven H. Voldman
- 主分类号： H01L2900
- IPC分类号： H01L2900
摘要：
Silicon is formed at selected locations on a substrate during fabrication of selected electronic components. A dielectric separation region is formed within the top silicon layer, and filled with a thermally conductive material. A liner material may be optionally deposited prior to depositing the thermally conductive material. In a second embodiment, a horizontal layer of thermally conductive material is also deposited in an oxide layer or bulk silicon layer below the top layer of silicon.
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