发明授权
- 专利标题: Continuous amorphous silicon layer sensors using doped poly-silicon back contact
- 专利标题(中): 连续非晶硅层传感器采用掺杂多晶硅背接触
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申请号: US09473578申请日: 1999-12-28
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公开(公告)号: US06288435B1公开(公告)日: 2001-09-11
- 发明人: Ping Mei , Jeng Ping Lu , Francesco Lemmi , Robert A. Street , James B. Boyce
- 申请人: Ping Mei , Jeng Ping Lu , Francesco Lemmi , Robert A. Street , James B. Boyce
- 主分类号: H01L31075
- IPC分类号: H01L31075
摘要:
A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.
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