发明授权
US06288435B1 Continuous amorphous silicon layer sensors using doped poly-silicon back contact 有权
连续非晶硅层传感器采用掺杂多晶硅背接触

Continuous amorphous silicon layer sensors using doped poly-silicon back contact
摘要:
A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.
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