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    Continuous amorphous silicon layer sensors using doped poly-silicon back contact
    3.
    发明授权
    Continuous amorphous silicon layer sensors using doped poly-silicon back contact 有权
    连续非晶硅层传感器采用掺杂多晶硅背接触

    公开(公告)号：US06288435B1

    公开(公告)日：2001-09-11

    申请号：US09473578

    申请日：1999-12-28

    申请人： Ping Mei ,  Jeng Ping Lu ,  Francesco Lemmi ,  Robert A. Street ,  James B. Boyce

    发明人： Ping Mei ,  Jeng Ping Lu ,  Francesco Lemmi ,  Robert A. Street ,  James B. Boyce

    IPC分类号： H01L31075

    CPC分类号： H01L27/14603 ,  H01L27/14665

    摘要： A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.

    摘要翻译： 描述了用于减少高填充因子传感器阵列中的垂直泄漏电流的方法和装置。 通过消除在金属背接触和本征非晶硅层之间发生的肖特基结界面来实现垂直漏电流的减小。 消除肖特基结的一种方法使用N掺杂非晶硅的超宽区域​​作为金属背接触和本征非晶硅层之间的缓冲区。 消除肖特基结的另一种方法用诸如N掺杂多晶硅的替代材料完全替代金属背接触和N掺杂的非晶硅层。

    Continuous amorphous silicon layer sensors using sealed metal back contact
    4.
    发明授权
    Continuous amorphous silicon layer sensors using sealed metal back contact 有权
    连续非晶硅层传感器采用密封金属背接触

    公开(公告)号：US06300648B1

    公开(公告)日：2001-10-09

    申请号：US09473579

    申请日：1999-12-28

    申请人： Ping Mei ,  Jeng Ping Lu ,  Francesco Lemmi ,  Robert A. Street ,  James B. Boyce

    发明人： Ping Mei ,  Jeng Ping Lu ,  Francesco Lemmi ,  Robert A. Street ,  James B. Boyce

    IPC分类号： H01L2904

    CPC分类号： H01L29/458 ,  H01L29/78609 ,  H01L31/1055

    摘要： A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.

    摘要翻译： 描述了用于减少高填充因子传感器阵列中的垂直泄漏电流的方法和装置。 通过消除在金属背接触和本征非晶硅层之间发生的肖特基结界面来实现垂直漏电流的减小。 消除肖特基结的一种方法使用N掺杂非晶硅的超宽区域​​作为金属背接触和本征非晶硅层之间的缓冲区。 消除肖特基结的另一种方法用诸如N掺杂多晶硅的替代材料完全替代金属背接触和N掺杂非晶硅层。

    Thin phosphorus nitride film as an n-type doping source used in a laser doping technology
    5.
    发明授权
    Thin phosphorus nitride film as an n-type doping source used in a laser doping technology 有权
    作为用于激光掺杂技术的n型掺杂源的薄磷氮化膜

    公开(公告)号：US06818535B2

    公开(公告)日：2004-11-16

    申请号：US10282265

    申请日：2002-10-28

    申请人： Jeng Ping Lu ,  Ping Mei ,  James B. Boyce

    发明人： Jeng Ping Lu ,  Ping Mei ,  James B. Boyce

    IPC分类号： H01L2100

    CPC分类号： H01L29/66765 ,  H01L21/2254 ,  H01L29/78669

    摘要： An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.

    摘要翻译： 描述了用于激光掺杂半导体材料的改进的方法和系统。 在本发明中，使用氮化磷作为掺杂剂源。 使磷氮化物与要掺杂的半导体的区域紧密接近。 激光的脉冲分解氮化亚氮，并且短暂熔化要掺杂的半导体的区域，以允许将掺杂剂原子从氮化磷引入到半导体中。

    Thin phosphorus nitride film as an N-type doping source used in laser doping technology
    6.
    发明授权
    Thin phosphorus nitride film as an N-type doping source used in laser doping technology 有权
    薄磷氮化膜作为激光掺杂技术中使用的N型掺杂源

    公开(公告)号：US06586318B1

    公开(公告)日：2003-07-01

    申请号：US09473576

    申请日：1999-12-28

    申请人： Jeng Ping Lu ,  Ping Mei ,  James B. Boyce

    发明人： Jeng Ping Lu ,  Ping Mei ,  James B. Boyce

    IPC分类号： H01L2100

    CPC分类号： H01L29/66765 ,  H01L21/2254 ,  H01L29/78669

    摘要： An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.

    摘要翻译： 描述了用于激光掺杂半导体材料的改进的方法和系统。 在本发明中，使用氮化磷作为掺杂剂源。 使磷氮化物与要掺杂的半导体的区域紧密接近。 激光的脉冲分解氮化亚氮，并且短暂熔化要掺杂的半导体的区域，以允许将掺杂剂原子从氮化磷引入到半导体中。

    Hybrid sensor pixel architecture with gate line and drive line synchronization
    7.
    发明授权
    Hybrid sensor pixel architecture with gate line and drive line synchronization 失效
    混合传感器像素结构，具有栅极线和驱动线同步

    公开(公告)号：US06252215B1

    公开(公告)日：2001-06-26

    申请号：US09069053

    申请日：1998-04-28

    申请人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

    发明人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

    IPC分类号： H01J4014

    CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H04N5/3741

    摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Gate line and drive voltage line synchronization is provided.

    摘要翻译： 用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。 放大器可以是用于高增益的单个多晶硅（沟道）晶体管。 选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。 复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。 光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。 选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。 激光结晶和再氢化技术非常适合于获得本文所述的装置。 提供栅极线和驱动电压线同步。

    Hybrid sensor pixel architecture
    9.
    发明授权
    Hybrid sensor pixel architecture 失效
    混合传感器像素架构

    公开(公告)号：US6031248A

    公开(公告)日：2000-02-29

    申请号：US67657

    申请日：1998-04-28

    申请人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

    发明人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

    IPC分类号： H01L27/146 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/46

    CPC分类号： H01L27/14609 ,  H01L27/14643

    摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein.

    摘要翻译： 用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。 放大器可以是用于高增益的单个多晶硅（沟道）晶体管。 选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。 复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。 光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。 选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。 激光结晶和再氢化技术非常适合于获得本文所述的装置。

    Hybrid sensor pixel architecture with threshold response
    10.
    发明授权
    Hybrid sensor pixel architecture with threshold response 失效
    具有阈值响应的混合传感器像素结构

    公开(公告)号：US6051827A

    公开(公告)日：2000-04-18

    申请号：US67941

    申请日：1998-04-28

    申请人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

    发明人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

    IPC分类号： H01L27/146 ,  H01J40/14

    CPC分类号： H01L27/14609

    摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Threshold response is provided.

    摘要翻译： 用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。 放大器可以是用于高增益的单个多晶硅（沟道）晶体管。 选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。 复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。 光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。 选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。 激光结晶和再氢化技术非常适合于获得本文所述的装置。 提供阈值响应。