发明授权
US06291850B1 Structure of cylindrical capacitor electrode with layer of hemispherical grain silicon
有权
具有半球形晶粒硅层的圆柱形电容器电极的结构
- 专利标题： Structure of cylindrical capacitor electrode with layer of hemispherical grain silicon
- 专利标题（中）： 具有半球形晶粒硅层的圆柱形电容器电极的结构
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申请号： US09435366申请日： 1999-11-08
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公开(公告)号： US06291850B1公开(公告)日： 2001-09-18
- 发明人: Byung Jae Choi , Kwan Goo Rha , Hong Seok Kim , Jae Young An
- 申请人： Byung Jae Choi , Kwan Goo Rha , Hong Seok Kim , Jae Young An
- 优先权： KR98-57883 19981223
- 主分类号： H01L27108
- IPC分类号： H01L27108
摘要：
A structure of a lower electrode of a capacitor includes a first lower electrode, second lower electrodes formed at both sides of the first lower electrode and electrically connected to and higher than the first lower electrode, and a Hemispherical Grain-Silicon (HSG-Si) layer formed on a top surface of the first lower electrode and inside walls of the second lower electrodes.
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