专利检索 ap:("Byung Jae Choi" OR "Kwan Goo Rha" OR "Hong Seok Kim" OR "Jae Young An") AND inv:"Jae Young An" 第 1 页

1.

发明授权
Structure of cylindrical capacitor electrode with layer of hemispherical grain silicon 有权
标题翻译：具有半球形晶粒硅层的圆柱形电容器电极的结构

公开(公告)号：US06291850B1

公开(公告)日：2001-09-18

申请号：US09435366

申请日：1999-11-08

申请人： Byung Jae Choi , Kwan Goo Rha , Hong Seok Kim , Jae Young An

发明人： Byung Jae Choi , Kwan Goo Rha , Hong Seok Kim , Jae Young An

IPC分类号： H01L27108

CPC分类号： H01L28/84 , H01L27/10852 , H01L28/75 , H01L28/91

摘要： A structure of a lower electrode of a capacitor includes a first lower electrode, second lower electrodes formed at both sides of the first lower electrode and electrically connected to and higher than the first lower electrode, and a Hemispherical Grain-Silicon (HSG-Si) layer formed on a top surface of the first lower electrode and inside walls of the second lower electrodes.

摘要翻译： 电容器的下电极的结构包括：第一下电极，形成在第一下电极的两侧并与第一下电极电连接并高于第一下电极的第二下电极，以及半球晶格硅（HSG-Si）层形成在第一下电极的顶表面和第二下电极的内壁上。