发明授权
- 专利标题： Semiconductor device with Schottky layer
- 专利标题（中）： 具肖特基层的半导体器件
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申请号： US09296496申请日： 1999-04-22
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公开(公告)号： US06294801B1公开(公告)日： 2001-09-25
- 发明人: Kazuyuki Inokuchi , Seiichi Takahashi , Shinichi Hoshi , Tadashi Saito , Nobusuke Yamamoto , Yuko Itoh , Nobumasa Higemoto
- 申请人： Kazuyuki Inokuchi , Seiichi Takahashi , Shinichi Hoshi , Tadashi Saito , Nobusuke Yamamoto , Yuko Itoh , Nobumasa Higemoto
- 优先权： JP10-122107 19980501; JP10-312063 19981102
- 主分类号： H01L31072
- IPC分类号： H01L31072
摘要：
A semiconductor device includes a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure. The Schottky electrode has a lower portion that penetrates through the cap layer and reaches the Schottky layer, and has an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.
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