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发明授权
US06300253B1 Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials 失效
在氮化硅材料上形成光刻胶的半导体加工方法以及包含氮化硅材料上的光致抗蚀剂的半导体晶片组件

  • 专利标题： Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials
  • 专利标题（中）： 在氮化硅材料上形成光刻胶的半导体加工方法以及包含氮化硅材料上的光致抗蚀剂的半导体晶片组件
  • 申请号： US09057155
    申请日： 1998-04-07
  • 公开(公告)号： US06300253B1
    公开(公告)日： 2001-10-09
  • 发明人: John T. Moore , Scott J. DeBoer , Mark Fischer
  • 申请人： John T. Moore , Scott J. DeBoer , Mark Fischer
  • 主分类号： H01L2131
  • IPC分类号： H01L2131
Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials
摘要：
In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. In another aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; c) forming a photoresist over and against the barrier layer; d) exposing the photoresist to a patterned beam of light to render at least one portion of the photoresist more soluble in a solvent than an other portion, the barrier layer being an antireflective surface that absorbs light passing through the photoresist; and e) exposing the photoresist to the solvent to remove the at least one portion while leaving the other portion over the barrier layer. In yet another aspect, the invention includes a semiconductor wafer assembly, comprising: a) a silicon nitride material, the material having a surface; b) a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) a photoresist over and against the barrier layer.
摘要（中）：

一方面，本发明包括半导体处理方法，包括：a）提供具有表面的氮化硅材料; b）在所述材料的表面上形成阻挡层，所述阻挡层包含硅和氮; 以及c）在所述阻挡层上形成光致抗蚀剂。 另一方面，本发明包括半导体处理方法，包括：a）提供具有表面的氮化硅材料; b）在所述材料的表面上形成阻挡层，所述阻挡层包含硅和氮; c）在阻挡层上形成光致抗蚀剂; d）将所述光致抗蚀剂暴露于图案化的光束以使所述光致抗蚀剂的至少一部分在溶剂中比其它部分更易溶，所述阻挡层是吸收通过所述光致抗蚀剂的光的抗反射表面; 以及e）将所述光致抗蚀剂暴露于所述溶剂以除去所述至少一个部分，同时将所述另一部分留在所述阻挡层上。 在另一方面，本发明包括半导体晶片组件，包括：a）氮化硅材料，该材料具有表面; b）在所述材料的表面上的阻挡层，所述阻挡层包含硅和氮; 以及c）在所述阻挡层上并抵靠所述阻挡层的光致抗蚀剂。

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