发明授权
US06301144B1 Semiconductor memory device 失效
半导体存储器件

  • 专利标题: Semiconductor memory device
  • 专利标题(中): 半导体存储器件
  • 申请号: US09650745
    申请日: 2000-08-30
  • 公开(公告)号: US06301144B1
    公开(公告)日: 2001-10-09
  • 发明人: Munehiro YoshidaYohji Watanabe
  • 申请人: Munehiro YoshidaYohji Watanabe
  • 优先权: JP11-246173 19990831
  • 主分类号: G11C700
  • IPC分类号: G11C700
Semiconductor memory device
摘要:
A memory chip is comprises memory cells and, for example, 16 amplifiers, each having a first output terminal and a second output terminal. The 16 amplifiers are connected at the first output terminal to 16 first-type signal lines RD(0) to RD(15) and at the second output terminal to four second-type signal lines bTRD(0) to bTRD(3) in increment fashion. More precisely, the second output terminals of every four amplifiers are connected the four second-type signal lines, respectively. A coincidence/non-coincidence determining circuit determines how the potentials of the second-type signal lines bTRD(0) to bTRD(3) and the potentials of the first-type signal lines RD(0) to RD(15) connected to all amplifiers that are connected to the second-type signal lines change when all data items of the same polarity are read from memory cells. Hence, a compressed-data test can be performed thereby compressing 16-bit data into 4-bit data by using only 20 signal lines.
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