发明授权
US06303192B1 Process to improve adhesion of PECVD cap layers in integrated circuits
失效
改善集成电路中PECVD盖层粘附性的工艺
- 专利标题： Process to improve adhesion of PECVD cap layers in integrated circuits
- 专利标题（中）： 改善集成电路中PECVD盖层粘附性的工艺
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申请号： US09121180申请日： 1998-07-22
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公开(公告)号： US06303192B1公开(公告)日： 2001-10-16
- 发明人: Rao V. Annapragada , Tekle M. Tafari , Subhas Bothra
- 申请人： Rao V. Annapragada , Tekle M. Tafari , Subhas Bothra
- 主分类号： C23C1416
- IPC分类号： C23C1416
摘要：
A method for making a multi-layered integrated circuit structure, includes depositing a methyl compound spin on glass layer over a substrate. The spin on glass layer is treated by plasma-deposition to form a SiO2 skin on the methyl compound spin on glass layer and then treated again by plasma-deposition to form a cap layer which adheres to the SiO2 skin.
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