发明授权
- 专利标题： Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices
- 专利标题（中）： 用于形成用于铁电存储器件的含铋陶瓷膜的低温化学气相沉积工艺
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申请号： US08975087申请日： 1997-11-20
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公开(公告)号： US06303391B1公开(公告)日： 2001-10-16
- 发明人: Frank S. Hintermaier , Christine Dehm , Wolfgang Hoenlein , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
- 申请人： Frank S. Hintermaier , Christine Dehm , Wolfgang Hoenlein , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A low temperature CVD process using a tris (&bgr;-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
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