发明授权
- 专利标题： Method of forming PID protection diode for SOI wafer
- 专利标题（中）： 形成SOI晶圆的PID保护二极管的方法
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申请号： US09614558申请日： 2000-07-12
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公开(公告)号： US06303414B1公开(公告)日： 2001-10-16
- 发明人: Ting Cheong Ang , Shyue Fong Quek , Sang Yee Loong , Jun Song
- 申请人： Ting Cheong Ang , Shyue Fong Quek , Sang Yee Loong , Jun Song
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
An integrated microelectronics semiconductor circuit fabricated on a silicon-on-insulator (SOI) type substrate can be protected from unwanted current surges and excessive heat buildup during fabrication by means of a heat-dissipating, protective plasma-induced-damage (PID) diode. The present invention fabricates such a protective diode as a part of the overall scheme in which the transistor devices are formed.
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