发明授权
- 专利标题： Semiconductor integrated circuit and method for manufacturing the same
- 专利标题（中）： 半导体集成电路及其制造方法
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申请号： US09095890申请日： 1998-06-11
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公开(公告)号： US06303958B1公开(公告)日： 2001-10-16
- 发明人: Hiroyuki Kanaya , Osamu Hidaka , Kumi Okuwada , Hiroshi Mochizuki
- 申请人： Hiroyuki Kanaya , Osamu Hidaka , Kumi Okuwada , Hiroshi Mochizuki
- 优先权： JP9-192168 19970717
- 主分类号： H01L27108
- IPC分类号： H01L27108
摘要：
A semiconductor integrated circuit has a ferroelectric capacitor. The ferroelectric capacitor includes a first insulation film formed above a semiconductor substrate, a first electrode which is buried in a first hole formed in the first insulation film and whose surface is flattened, a second insulation film formed above the first insulation film and having a second hole above the first electrode, a ferroelectric film formed in the second hole, and a second electrode formed in the second hole and above the ferroelectric film and flattened so as to be flush with a surface of the second insulation film.
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