发明授权
- 专利标题: Method of producing a photovoltaic device using a sputtering method
- 专利标题(中): 使用溅射法制造光伏器件的方法
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申请号: US09588626申请日: 2000-06-07
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公开(公告)号: US06306267B1公开(公告)日: 2001-10-23
- 发明人: Hideo Tamura , Yasushi Fujioka , Masahiro Kanai , Akira Sakai
- 申请人: Hideo Tamura , Yasushi Fujioka , Masahiro Kanai , Akira Sakai
- 优先权: JP9-123990 19970514
- 主分类号: C23C1434
- IPC分类号: C23C1434
摘要:
The sputtering method of the present invention comprises the steps of forming a plurality of tunnel-like magnetic fluxes on a target, forming an electric field between the target and a belt-like substrate, and conveying the belt-like substrate while reciprocating the plurality of tunnel-like magnetic fluxes at least in the direction of conveying the belt-like substrate, wherein the speed v of conveying the substrate, the distance L in the direction of conveying the belt-like substrate between two adjacent points where the magnetic field of the plurality of tunnel-like magnetic fluxes and the electric field cross each other at a right angle, and the period T of the reciprocating motion of the plurality of tunnel-like magnetic fluxes are controlled so as to L/v=(n+½)T wherein n is z−{fraction (1/16)}
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