公开(公告)号：US06306267B1

公开(公告)日：2001-10-23

申请号：US09588626

申请日：2000-06-07

申请人： Hideo Tamura ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai

发明人： Hideo Tamura ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai

IPC分类号： C23C1434

CPC分类号： H01J37/3455 ,  C23C14/35 ,  C23C14/562 ,  H01J37/3405

摘要： The sputtering method of the present invention comprises the steps of forming a plurality of tunnel-like magnetic fluxes on a target, forming an electric field between the target and a belt-like substrate, and conveying the belt-like substrate while reciprocating the plurality of tunnel-like magnetic fluxes at least in the direction of conveying the belt-like substrate, wherein the speed v of conveying the substrate, the distance L in the direction of conveying the belt-like substrate between two adjacent points where the magnetic field of the plurality of tunnel-like magnetic fluxes and the electric field cross each other at a right angle, and the period T of the reciprocating motion of the plurality of tunnel-like magnetic fluxes are controlled so as to L/v=(n+½)T wherein n is z−{fraction (1/16)}

摘要翻译： 本发明的溅射方法包括以下步骤：在目标上形成多个隧道状磁通量，在靶和带状基底之间形成电场，并且在传送带状衬底的同时使多个 至少在输送带状基板的方向上的隧道状磁通量，其中传送基板的速度v，在传送带状基板的方向上的距离L，两个相邻点之间的磁场 多个隧道状磁通和电场成直角交叉，多个隧道状磁通的往复运动的周期T被控制为L / v =（n + 1/2） T，其中n是z- {分数（1/16）}

公开(公告)号：US5589007A

公开(公告)日：1996-12-31

申请号：US523169

申请日：1995-09-05

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hideo Tamura ,  Atsushi Yasuno ,  Akira Sakai ,  Tadashi Hori

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hideo Tamura ,  Atsushi Yasuno ,  Akira Sakai ,  Tadashi Hori

IPC分类号： H01L21/205 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element comprises a first non-monocrystalline silicon-containing semiconductor layer of a first-conductivity type, a first i-type non-monocrystalline silicon-containing semiconductor layer formed by microwave plasma CVD, a second i-type non-monocrystalline silicon-containing semiconductor layer formed by high-frequency plasma CVD, and a second non-monocrystalline silicon-containing semiconductor layer of a conductivity type opposite to the first-conductivity type, wherein the second semiconductor layer is formed by plasma doping.

摘要翻译： 光电元件包括​​第一导电类型的第一非单晶硅含硅半导体层，通过微波等离子体CVD形成的第一i型非单晶含硅半导体层，第二i型非单晶硅含硅半导体层， 通过高频等离子体CVD形成的含硅半导体层和与第一导电型相反的导电类型的第二非单晶硅含量半导体层，其中通过等离子体掺杂形成第二半导体层。

公开(公告)号：US6093290A

公开(公告)日：2000-07-25

申请号：US76238

申请日：1998-05-12

申请人： Hideo Tamura ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai

发明人： Hideo Tamura ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai

IPC分类号： C23C14/35 ,  C23C14/56 ,  H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3455 ,  C23C14/35 ,  C23C14/562 ,  H01J37/3405

摘要： The sputtering method of the present invention comprises the steps of forming a plurality of tunnel-like magnetic fluxes on a target, forming an electric field between the target and a belt-like substrate, and conveying the belt-like substrate while reciprocating the plurality of tunnel-like magnetic fluxes at least in the direction of conveying the belt-like substrate, wherein the speed v of conveying the substrate, the distance L in the direction of conveying the belt-like substrate between two adjacent points where the magnetic field of the plurality of tunnel-like magnetic fluxes and the electric field cross each other at a right angle, and the period T of the reciprocating motion of the plurality of tunnel-like magnetic fluxes are controlled so as to L/v=(n+1/2)T wherein n is z-1/16

摘要翻译： 本发明的溅射方法包括以下步骤：在目标上形成多个隧道状磁通量，在靶和带状基底之间形成电场，并且在传送带状衬底的同时使多个 至少在输送带状基板的方向上的隧道状磁通量，其中传送基板的速度v，在传送带状基板的方向上的距离L，两个相邻点之间的磁场 多个隧道状磁通和电场以直角彼此交叉，并且多个隧道状磁通的往复运动的周期T被控制为L / v =（n ++ E ，1/2 + EE）T，其中n是z- + E，fra 1/16 + EE

公开(公告)号：US20050161077A1

公开(公告)日：2005-07-28

申请号：US10625041

申请日：2003-07-23

申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： G03G5/08 ,  C23C16/50 ,  C23C16/511 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/00

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： An apparatus for efficiently and continuously mass-producing a photovoltaic element by a plasma CVD method having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. The apparatus has a first chamber where raw material gas flows from top to bottom. A second chamber is connected to the first chamber by a separating path and causes the raw material gas to flow from bottom to top along the movement direction of the long substrate.

摘要翻译： 一种用于通过等离子体CVD法有效且连续地大量生产光电元件的装置，其具有优异的电流 - 电压特性和优异的光电转换效率。 该装置具有第一室，其中原料气体从上到下流动。 第二室通过分离路径连接到第一室，并且使原料气体沿着长基板的移动方向从底部向上流动。

公开(公告)号：US06495392B2

公开(公告)日：2002-12-17

申请号：US09911172

申请日：2001-07-23

申请人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

发明人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： H01L2100

CPC分类号： H01L31/075 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： A process for producing a semiconductor device such as a photovoltaic element including a solar cell or a photosensor having a photoelectric conversion semiconductor layer formed by sequentially forming a p-type or n-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, an i-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, and an n-type or p-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material on a substrate by means of plasma CVD, characterized in that at least one i-type semiconductor as said i-type semiconductor layer is formed in a discharge chamber having a cathode electrode by means of VHF plasma CVD using a silicon-containing raw material gas, wherein a VHF power of a wattage which is two times or less that of a VHF power required for decomposing 100% of said silicon-containing raw material gas is applied to said cathode electrode.

摘要翻译： 一种用于制造半导体器件的方法，诸如包括太阳能电池的光电元件或具有光电转换半导体层的光电传感器的光电元件，其顺序地形成由非单晶硅系列半导体材料构成的p型或n型半导体层 由非单晶硅系列半导体材料构成的i型半导体层和由等离子体CVD在基板上的非单晶硅系半导体材料构成的n型或p型半导体层， 其特征在于，通过使用含硅原料气体的VHF等离子体CVD，在具有阴极的放电室中形成至少一个作为所述i型半导体层的i型半导体，其中，功率的VHF功率 是分解100％的所述含硅原料气体所需的VHF功率的两倍或更少被施加到所述阴极。

公开(公告)号：US06368944B1

公开(公告)日：2002-04-09

申请号：US09664219

申请日：2000-09-18

申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： H01L2120

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.

摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。

公开(公告)号：US06287943B1

公开(公告)日：2001-09-11

申请号：US09363825

申请日：1999-07-30

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： H01L2120

CPC分类号： C23C16/509 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/545 ,  Y02P70/521

摘要： The invention provides a process for producing a semiconductor layer by introducing a raw gas into a discharge chamber and supplying high-frequency power to the chamber to decompose the raw gas by discharge, thereby forming a semiconductor layer on a substrate within the discharge chamber, the process comprising the steps of supplying high-frequency power of at least very high frequency (VHF) as the high-frequency power; supplying bias power of direct current power and/or high-frequency power of radio-frequency (RF) together with the high-frequency power of VHF to the discharge chamber; and controlling a direct current component of an electric current flowing into an electrode, to which the bias power is supplied, so as to fall within a range of from 0.1 A/m2 to 10 A/m2 in terms of a current density based on the area of an inner wall of the discharge chamber. A good-quality semiconductor layer can be deposited over a large area at a high speed.

摘要翻译： 本发明提供一种通过将原料气体引入放电室并向室内供给高频电力以通过放电分解原料气体从而在放电室内的基板上形成半导体层来制造半导体层的方法， 过程包括以下步骤：提供至少非常高频（VHF）的高频功率作为高频功率; 将直流电力和/或射频（RF）的高频功率与VHF的高频功率一起提供给放电室; 并且以电流密度为基础控制流入施加偏压功率的电极的电流的直流分量，以0.1A / m 2至10A / m 2的范围内 放电室内壁面积。 高质量的半导体层可以在大面积上高速沉积。

公开(公告)号：US5968274A

公开(公告)日：1999-10-19

申请号：US754066

申请日：1996-11-20

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

IPC分类号： C23C14/56 ,  C23C16/54 ,  H01L31/20

CPC分类号： H01L31/206 ,  C23C14/562 ,  C23C14/568 ,  C23C16/545 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein semiconductor layers of desired conductivity type are deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via gas gates having means for introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off from the center of the separation chamber of the gas gate.

摘要翻译： 本发明的目的在于提供具有优异特性的功能性沉积膜的连续成型方法和装置，同时防止在具有不同压力的成膜室之间任何相互混合的气体，其中期望的导电类型的半导体层沉积在带状衬底上 多个成膜室，通过等离子体CVD，同时带状基板沿其长度方向连续移动通过多个通过气门连接的成膜室，其具有用于将清除气体引入狭缝状分离通道 其特征在于，连接形成半导体结的i型层成膜室和i型层成膜室的n型或p型层成膜室中的至少一个气门具有比i型层成膜室高的压力 所述清除气体导入位置设置在形成有n型或p型层的膜上 r侧从气门的分离室的中心离开。

公开(公告)号：US5008726A

公开(公告)日：1991-04-16

申请号：US273070

申请日：1988-11-18

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai

IPC分类号： H01L31/0296 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/075 ,  H01L31/1832 ,  Y02E10/548

摘要： An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZSnSe.sub.1-x Te.sub.x :H:M film, where M is a dopant of p-type or n-type: the quantitative ratio of the Se to the Te is in the range of from 1:9 to 3:7 in terms of atomic ratio: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

公开(公告)号：US4959106A

公开(公告)日：1990-09-25

申请号：US399396

申请日：1989-08-28

申请人： Katsumi Nakagawa ,  Masahiro Kanai ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Tsutomu Murakami

发明人： Katsumi Nakagawa ,  Masahiro Kanai ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Tsutomu Murakami

IPC分类号： H01L21/363 ,  H01L21/365 ,  H01L31/0296 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/073 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/068 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02E10/547

摘要： A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic % of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol % per unit volume.

摘要翻译： 1.一种通过p型半导体层和n型半导体层的连接产生光电动势的光电元件，其特征在于，所述半导体层中的至少一个由锌原子，硒原子， 可选的碲原子和至少氢原子，所述沉积膜含有含有1至4原子％氢原子的p型或n型掺杂剂，其含有比例为1:9至3的硒原子和碲原子 ：7（以原子数计），并且还含有65〜85体积％的每单位体积的晶粒。