发明授权
US06306775B1 Methods of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, and methods of selectively etching polysilicon relative to BPSG
失效
相对于沉积的氧化物，热生长的氧化物和氮化物中的至少一种选择性蚀刻多晶硅的方法以及相对于BPSG选择性蚀刻多晶硅的方法
- 专利标题： Methods of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, and methods of selectively etching polysilicon relative to BPSG
- 专利标题（中）： 相对于沉积的氧化物，热生长的氧化物和氮化物中的至少一种选择性蚀刻多晶硅的方法以及相对于BPSG选择性蚀刻多晶硅的方法
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申请号： US09599143申请日： 2000-06-21
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公开(公告)号： US06306775B1公开(公告)日： 2001-10-23
- 发明人: Andrew Li
- 申请人： Andrew Li
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
The invention includes methods of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, and methods of selectively etching polysilicon relative to BPSG. In one implementation, a method of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, includes forming a substrate to have a layer comprising polysilicon received over at least one layer comprising at least one of deposited oxide, thermally grown oxide, and nitride. The polysilicon is exposed to an aqueous solution comprising NH4F, an oxidizer, CH3COOH, TMAH, and HF under conditions effective to selectively etch at least a portion of the polysilicon comprising layer relative to an ultimately exposed portion of the at least one of deposited oxide, thermally grown oxide, and nitride. In one implementation, the polysilicon is exposed to an aqueous solution comprising NH4F, an oxidizer, CH3COOH, and TMAF under conditions effective to selectively etch at least a portion of the polysilicon comprising layer relative to an ultimately exposed portion of the at least one of deposited oxide, thermally grown oxide, and nitride.