发明授权
US06309932B1 Process for forming a plasma nitride film suitable for gate dielectric application in sub-0.25 &mgr;m technologies
有权
用于在0.25μm以下的技术中形成适用于栅极电介质应用的等离子体氮化物膜的工艺
- 专利标题： Process for forming a plasma nitride film suitable for gate dielectric application in sub-0.25 &mgr;m technologies
- 专利标题（中）： 用于在0.25μm以下的技术中形成适用于栅极电介质应用的等离子体氮化物膜的工艺
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申请号： US09334491申请日： 1999-06-16
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公开(公告)号： US06309932B1公开(公告)日： 2001-10-30
- 发明人: Yi Ma , Pradip K. Roy
- 申请人： Yi Ma , Pradip K. Roy
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
A process for forming a layered gate dielectric structure which suppresses boron diffusion and provides a gate dielectric structure which is resistant to charge trapping, pinhole-free, and which does not introduce mobility or drive current problems. The process for forming the layered gate dielectric structure includes plasma enhanced chemical vapor deposition of a structurally deficient nitride film and an annealing process which converts the originally deposited film to either an oxynitride film or a stoichiometric nitride film.
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