A method for depositing a sacrificial oxide for fabricating a semiconductor device includes preparing p-doped silicon regions on a semiconductor wafer for depositing a sacrificial oxide on the p-doped silicon regions. The method also includes the step of placing the wafer in an electrochemical cell such that a solution including electrolytes interacts with the p-doped silicon regions to form a sacrificial oxide on the p-doped silicon regions when a potential difference is provided between the wafer and the solution. Processing the wafer using the sacrificial oxide layer is also included.