发明授权
- 专利标题: Methods of forming a layer of silicon nitride in a semiconductor fabrication process
- 专利标题(中): 在半导体制造工艺中形成氮化硅层的方法
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申请号: US09057153申请日: 1998-04-07
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公开(公告)号: US06316372B1公开(公告)日: 2001-11-13
- 发明人: Scott Jeffrey DeBoer , John T. Moore , Randhir P. S. Thakur , Mark Fischer
- 申请人: Scott Jeffrey DeBoer , John T. Moore , Randhir P. S. Thakur , Mark Fischer
- 主分类号: H01L2131
- IPC分类号: H01L2131
摘要:
In one aspect, the invention includes a semiconductor fabrication process, comprising: a) providing a substrate; b) forming a layer of silicon nitride over the substrate, the layer having a thickness; and c) enriching a portion of the thickness of the silicon nitride layer with silicon, the portion comprising less than or equal to about 95% of the thickness of the layer of silicon nitride. In another aspect, the invention includes a semiconductor fabrication process, comprising: a) providing a substrate; b) forming a layer of silicon nitride over the substrate, the layer having a thickness; and c) increasing a refractive index of a first portion of the thickness of the silicon nitride layer relative to a refractive index of a second portion of the silicon nitride layer, the first portion comprising less than or equal to about 95% of the thickness of the silicon nitride layer. In yet another aspect, the invention includes semiconductor wafer assembly, comprising: a) a semiconductor wafer substrate; and b) a layer of silicon nitride over the substrate, the layer comprising a thickness and two portions elevationally displaced relative to one another, a first of the two portions having less resistance than a second of the two portions, the first portion comprising less than or equal to about 95% of the thickness of the silicon nitride layer.