发明授权
- 专利标题: Surface acoustic wave device, and its fabrication process
- 专利标题(中): 表面声波器件及其制造工艺
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申请号: US09317199申请日: 1999-05-24
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公开(公告)号: US06316860B1公开(公告)日: 2001-11-13
- 发明人: Noritoshi Kimura , Masahiro Nakano , Katsuo Sato
- 申请人: Noritoshi Kimura , Masahiro Nakano , Katsuo Sato
- 优先权: JP9-275173 19970922; JP9-284443 19971001
- 主分类号: H01L4108
- IPC分类号: H01L4108
摘要:
The surface acoustic wave device of the invention comprises a piezoelectric substrate made up of 64° rotated Y-cut lithium niobate (64LN) or 36° rotated Y-cut lithium tantalate (36LT) and an interdigital electrode formed thereon. The interdigital electrode comprises a titanium buffer metal film and an aluminum film formed thereon. On the 64LN substrate, both the titanium buffer metal film and the aluminum film are converted into a single-crystal film that manifests itself in a spot form alone upon selected-area electron diffraction. By forming the aluminum film on the 36LT substrate with the titanium buffer metal film located therebetween, it is possible to obtain a high-orientation, polycrystalline aluminum film oriented in the (111) direction. The aluminum film is made up of a single-crystal film or a high-orientation polycrystalline film oriented in the (111) direction, whereby migration of aluminum atoms is inhibited, resulting in a power-durability improvement.
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