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34 条记录 (耗时 0.012 秒)

    Packaging substrate and manufacturing method thereof, integrated circuit device and manufacturing method thereof, and SAW device
    2.
    发明申请
    Packaging substrate and manufacturing method thereof, integrated circuit device and manufacturing method thereof, and SAW device 有权
    包装基板及其制造方法，集成电路装置及其制造方法以及SAW器件

    公开(公告)号：US20060134834A1

    公开(公告)日：2006-06-22

    申请号：US11333316

    申请日：2006-01-18

    申请人： Masahiro Nakano ,  Katsuhiko Gunji ,  Yasunobu Oikawa ,  Katsuo Sato

    发明人： Masahiro Nakano ,  Katsuhiko Gunji ,  Yasunobu Oikawa ,  Katsuo Sato

    IPC分类号： H01L21/48

    CPC分类号： H03H9/1071 ,  H01L2224/16225 ,  H01L2224/45144 ,  H03H9/0585 ,  H03H9/059 ,  H03H9/08 ,  H01L2924/00

    摘要： A basic portion layer 21 of a substrate electrode 12a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layer 21 is formed is subjected to sintering. A surface of the basic portion layer 21 in the sintered substrate member is polished. On the polished basic portion layer 21, the plating layers 22, 23. are formed, so that surface roughness of the substrate electrode 12a may be, for example, not larger than 0.1 μmRMS Accordingly, junction strength of an integrated circuit element mounted on a packaging substrate by a flip-chip method can be improved.

    摘要翻译： 衬底电极12a的基本部分层21，其在陶瓷的衬底构件上电连接到突出电极13。 对其上形成有碱性部分层21的基材进行烧结。 研磨烧结基板部件中的基体部分层21的表面。 在抛光的基底层21上，形成镀层22,23，使得基板电极12a的表面粗糙度例如可以不大于0.1μm。因此，集成电路元件的结合强度 可以提高通过倒装芯片方法的封装衬底。

    Surface acoustic wave device and piezoelectric substrate used therefor
    3.
    发明授权
    Surface acoustic wave device and piezoelectric substrate used therefor 有权
    表面声波装置及其压电基板

    公开(公告)号：US06452306B1

    公开(公告)日：2002-09-17

    申请号：US09952927

    申请日：2001-09-14

    申请人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki

    发明人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki

    IPC分类号： H01L4104

    CPC分类号： H03H9/02543

    摘要： A compact and wide band surface acoustic wave device for intermediate-frequency is disclosed. A piezoelectric substrate for use in a surface acoustic wave device having high electromechanical coupling factor and low SAW velocity is also disclosed. The surface acoustic wave device is constituted of a piezoelectric substrate 1 and inter-digital electrodes 2, 2 formed on the piezoelectric substrate 1. The piezoelectric substrate 1 has a crystal structure of Ca3Ga2Ge4O14 and is represented by the chemical formula, Sr3NbGa3Si2O14. A cut angle of the piezoelectric substrate 1 cut out of the single crystal and a direction of propagation of surface acoustic waves on the piezoelectric substrate represented in terms of Euler's angles (&phgr;, &thgr;, &psgr;) are found in one of a first area represented by −5°≦&phgr;≦15°, 0°≦&thgr;≦180°, and −50°≦&psgr;≦50° and a second area represented by 15°≦&phgr;≦30°, 0°≦&thgr;≦180°, and −40°≦&psgr;≦40°.

    摘要翻译： 公开了一种用于中频的紧凑且宽带的声表面波装置。 还公开了一种用于具有高机电耦合系数和低SAW速度的表面声波装置中的压电基片。声表面波装置由压电基片1和形成在压电基片1上的数字间电极2,2构成 压电基板1具有Ca 3 Ga 2 Ge 4 O 14的晶体结构，由化学式Sr 3 Nb Ga 3 Si 2 O 14表示。 由欧姆角（phi，θ，psi）表示的压电基片1从单晶切割的角度和表面声波的传播方向在欧拉角（phi，θ，psi）表示的第一区域中， -5°<= phi <= 15°，0°<=θ<= 180°，-50°<= psi <= 50°，第二区由15°<= phi <= 30°，0° <=θ<= 180°，-40°<= psi <= 40°。

    Process for preparation of modified aromatic hydrocarbon resin
    5.
    发明授权
    Process for preparation of modified aromatic hydrocarbon resin 失效
    改性芳烃树脂的制备方法

    公开(公告)号：US4410690A

    公开(公告)日：1983-10-18

    申请号：US373693

    申请日：1982-04-30

    申请人： Akira Miyamoto ,  Katsuo Sato ,  Toshiaki Nishimura ,  Yoshitaka Yamagishi ,  Yoshimasa Mitui

    发明人： Akira Miyamoto ,  Katsuo Sato ,  Toshiaki Nishimura ,  Yoshitaka Yamagishi ,  Yoshimasa Mitui

    IPC分类号： C08G10/00 ,  C08G10/04 ,  C08G63/547 ,  C08G2/28

    CPC分类号： C08G63/547

    摘要： A process for the preparation of a modified aromatic hydrocarbon resin which comprises reacting an aromatic hydrocarbon-formaldehyde resin with an unsaturated polybasic acid or an anhydride thereof, together with a saturated polybasic acid or an anhydride thereof if necessary, in the presence or absence of water, while introducing steam into the reaction system to remove by-produced formaldehyde out of the reaction system, and reacting the formed reaction product with at least one dihydroxy compound selected from the group consisting of (A) a glycol and (B) a hydroxy-terminated oligomer obtained by reacting a glycol with an unsaturated polybasic acid or an anhydride thereof; the cured product of the modified aromatic hydrocarbon resin being excellent in mechanical strength and resistance to water and alkalis.

    摘要翻译： 一种制备改性芳族烃树脂的方法，其包括在有或没有水的情况下使芳族烃 - 甲醛树脂与不饱和多元酸或其酸酐以及必要时的饱和多元酸或其酸酐反应 同时将蒸汽引入反应体系以除去反应体系中的副产甲醛，并使形成的反应产物与至少一种选自（A）二醇和（B）羟基 - 通过使二醇与不饱和多元酸或其酸酐反应得到的封端低聚物; 改性芳族烃树脂的固化产物具有优异的机械强度和耐水和耐碱性。

    Surface acoustic wave device
    8.
    发明授权
    Surface acoustic wave device 失效
    表面声波装置

    公开(公告)号：US06534897B2

    公开(公告)日：2003-03-18

    申请号：US09934524

    申请日：2001-08-23

    申请人： Masao Takeuchi ,  Kenji Inoue ,  Katsuo Sato

    发明人： Masao Takeuchi ,  Kenji Inoue ,  Katsuo Sato

    IPC分类号： H03H925

    CPC分类号： H03H9/0259 ,  H03H9/02543 ,  H03H9/14505

    摘要： The invention is to realize a surface acoustic wave device that attains a wide band and a small size, and lowers a loss by utilizing the natural single-phase unidirectional transducer characteristics. The surface acoustic wave device comprises a piezoelectric substrate (1) and a pair of interdigitated electrodes (2) provided on one main surface of the piezoelectric substrate 1. As the material of the piezoelectric substrate (1), a single crystal is used that belongs to the point group 32, has the Ca3Ga2Ge4O14 type crystalline structure, comprises La, Ta, Ga and O as main components, and is represented by a chemical formula La3Ta0.5Ga5.5O14. When the cut angle of the substrate (1) and the propagation direction are represented by Eulerian angles (&phgr;, &thgr;, &psgr;), &phgr;, &thgr; and &psgr; are in a first region where &phgr; is from −5° to 5°, &thgr; is from 135° to 155°, and &psgr; is from 15° to 40°, or in a second region where &phgr; is from 10° to 20°, &thgr; is from 140° to 157°, and &psgr; is from 30° to 60°.

    摘要翻译： 本发明旨在实现一种具有宽带和小尺寸的表面声波器件，并且通过利用天然单相单向传感器特性降低损耗。声表面波器件包括压电基片（1）和一对 设置在压电基板1的一个主表面上的交错电极（2）。作为压电基板（1）的材料，使用属于点组32的单晶，具有Ca 3 Ga 2 Ge 4 O 14型晶体结构，包括La ，Ta，Ga和O为主要成分，由化学式La3Ta0.5Ga5.5O14表示。 当基板（1）的切割角度和传播方向由欧拉角（phi，θ，psi）表示时，phi，θ和psi在第一区域，其中phi为-5°至5°，θ为 从135°至155°，psi为15°至40°，或在第二区域，其中phi为10°至20°，θ为140°至157°，psi为30°至60° 。

    Surface acoustic wave device
    9.
    发明授权
    Surface acoustic wave device 有权
    表面声波装置

    公开(公告)号：US06407486B1

    公开(公告)日：2002-06-18

    申请号：US09696281

    申请日：2000-10-26

    申请人： Noritoshi Kimura ,  Masahiro Nakano ,  Katsuo Sato

    发明人： Noritoshi Kimura ,  Masahiro Nakano ,  Katsuo Sato

    IPC分类号： H03H925

    CPC分类号： H03H3/08 ,  H03H9/02543 ,  H03H9/02559 ,  H03H9/145

    摘要： An object of the invention is to provide a SAW device having an electrode film on a lithium tantalate substrate having a cut angle approximate to 36 degree rotated Y cut, the electrode film including an aluminum single crystal film having improved power durability. The SAW device has interdigital electrodes on a substrate. The substrate is constructed of a 38 to 44 degree rotated Y cut lithium tantalate single crystal, each interdigital electrode includes a titanium film and an aluminum film formed thereon, and the aluminum film is a single crystal film which develops only spots on selected area electron diffraction analysis.

    摘要翻译： 本发明的目的是提供一种具有在钽酸锂基片上的电极膜的SAW器件，其具有大约36度旋转Y切割的切割角度，该电极膜包括具有改善的功率耐久性的铝单晶膜.SMA器件具有 叉指电极在基底上。 基板由38至44度旋转的Y切割钽酸锂单晶构成，每个叉指电极包括钛膜和形成在其上的铝膜，并且铝膜是仅在所选择的面积电子衍射上形成斑点的单晶膜 分析。

    Surface acoustic wave device and substrate thereof
    10.
    发明授权
    Surface acoustic wave device and substrate thereof 失效
    声表面波器件及其衬底

    公开(公告)号：US06400061B1

    公开(公告)日：2002-06-04

    申请号：US09574310

    申请日：2000-05-19

    申请人： Kenji Inoue ,  Tsuguo Fukuda ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Kiyoshi Uchida

    发明人： Kenji Inoue ,  Tsuguo Fukuda ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Kiyoshi Uchida

    IPC分类号： H01L4108

    CPC分类号： H03H9/02543

    摘要： The present invention provides a piezoelectric substrate for a surface acoustic wave device which has high electromechanical coupling coefficient and low SAW velocity, and a surface acoustic wave device using the same. The present invention applies a single crystal comprising belonging to a point group 32 and having Ca3Ga2Ge4O14 type crystal structure. The basic component of the single crystal is comprised of La, Sr, Ta, Ga and O and is represented by the chemical formula: La3−xSrxTa0.5+0.5xGa5.5−0.5xO14. The composition ratio of Sr is preferably in the range of 0 x≦0.15, and more preferably in the range of 0.07 x≦0.08. The present invention also provides a surface acoustic wave device using that in which an interdigital finger electrode is formed in one main surface of the aforementioned piezoelectric substrate. When a cut angle of the substrate cut out of the single crystal and a propagation direction of surface acoustic waves are represented in terms of Euler angles (&phgr;, &thgr;, &psgr;), adequate characteristics can be obtained by selecting these angles.

    摘要翻译： 本发明提供了一种具有高机电耦合系数和低SAW速度的表面声波装置的压电基片和使用该压电基片的表面声波装置。 本发明应用包含属于点组32并具有Ca 3 Ga 2 Ge 4 O 14型晶体结构的单晶。 单晶的基本成分由La，Sr，Ta，Ga和O组成，由化学式La3-xSrxTa0.5 + 0.5xGa5.5-0.5xO14表示。 Sr的组成比优选地在0℃的范围内。“CUSTOM-CHARACTER FILE =”20“ID =”CUSTOM-CHARACTER- 00001“/> x <= 0.15，更优选在0.07 x <= 0.08。 本发明还提供一种使用在上述压电基板的一个主表面上形成叉指指状电极的表面声波装置。 当从单晶切割的基板的切割角度和表面声波的传播方向以欧拉角（phi，θ，psi）表示时，通过选择这些角度可以获得足够的特性。