发明授权
US06320219B1 Memory cell for EEPROM devices and corresponding fabricating process
有权
用于EEPROM器件的存储单元和相应的制造工艺
- 专利标题： Memory cell for EEPROM devices and corresponding fabricating process
- 专利标题（中）： 用于EEPROM器件的存储单元和相应的制造工艺
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申请号： US09576168申请日： 2000-05-22
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公开(公告)号： US06320219B1公开(公告)日： 2001-11-20
- 发明人: Bruno Vajana , Carlo Cremonesi , Roberta Bottini , Giovanna Dalla Libera
- 申请人： Bruno Vajana , Carlo Cremonesi , Roberta Bottini , Giovanna Dalla Libera
- 优先权： ITMI96A2741 19961224
- 主分类号： H01L218247
- IPC分类号： H01L218247
摘要：
A memory cell of the EEPROM type formed on a semiconductor material substrate having a first conductivity type includes a drain region having a second conductivity type and extending at one side of a gate oxide region which includes a thin tunnel oxide region. The memory cell also includes a region of electric continuity having the second conductivity type, being formed laterally and beneath the thin tunnel oxide region, and partly overlapping the drain region. The region of electric continuity is produced by implantation at a predetermined angle of inclination.
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