发明授权
- 专利标题： Tantalum sputtering target and method of manufacture
- 专利标题（中）： 钽溅射靶及其制造方法
-
申请号： US09316777申请日： 1999-05-21
-
公开(公告)号： US06323055B1公开(公告)日： 2001-11-27
- 发明人: Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
- 申请人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
信息查询
