发明授权
- 专利标题： Insulated gate type semiconductor device and method of manufacturing thereof
- 专利标题（中）： 绝缘栅型半导体器件及其制造方法
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申请号： US09394047申请日： 1999-09-13
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公开(公告)号： US06323518B1公开(公告)日： 2001-11-27
- 发明人: Kozo Sakamoto , Yoshito Nakazawa , Eiji Yanokura
- 申请人： Kozo Sakamoto , Yoshito Nakazawa , Eiji Yanokura
- 优先权： JP10-261713 19980916
- 主分类号： H01L2362
- IPC分类号： H01L2362
摘要：
Plural grooves are formed in a main surface of semiconductor layers on semiconductor substrate, and gate layers connected to a gate electrode are formed in the plural grooves through a gate insulating film, and then a body diffusion layer is formed between the gate layers, and afterwards, a source diffusion layer connected to a source electrode and a source diffusion layer connected to a source electrode are formed in an identical process.
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